scispace - formally typeset
Search or ask a question
Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
More filters
Patent
03 Jun 2011
TL;DR: In nonvolatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting method including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an unprogrammed cell among the strings, and boosting channels of the floated inhibit strings.
Abstract: Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

349 citations

Journal ArticleDOI
TL;DR: In this article, a carbon nanotube paste was prepared and screen-printed to form an electron emission layer on a glass-based substrate for large-area field emission displays.

348 citations

Journal ArticleDOI
TL;DR: The application of regioregular poly(3-alkylthiophene)s (rr-P3ATs) to sort sc-SWNTs is reported, which offers a facile and a scalable route for separating sc- SWNTs and fabrication of electronic devices.
Abstract: Metallic and semiconducting carbon nanotubes generally coexist in 'as-grown' materials. In this study, single-walled nanotubes are sorted using regioregular poly(3-alkylthiophene)s; rational selection of polymers, solvent and temperature allows the selective dispersion of semiconducting carbon nanotubes.

347 citations

Journal ArticleDOI
01 Mar 2021-Nature
TL;DR: In this article, the authors review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking two-dimensional transistors.
Abstract: Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.

347 citations

Journal ArticleDOI
TL;DR: In this paper, the properties of triisopropylsilylethynyl pentacene (TIPS-PEN) have been investigated for the fabrication of 1D single-crystalline nanoor microstructures.
Abstract: There has been significant interest in the fabrication of 1D single-crystalline building blocks from p-conjugated organic molecules for use in high-performance supramolecular electronics. Control over the single-crystalline supramolecular self-assembly of p-conjugated organic molecules provides great opportunities to fine-tune the molecular ordering of 1D nanoor microstructured building blocks grown by strong p–p interactions, and thus to optimize their electrical properties for applications in organic field-effect transistors (OFETs). Obtaining high-quality single crystals with p-conjugated organic molecules through solution processing is required more than obtaining them through complex vacuum processes. Some research has recently shown that self-assembly through strong p–p stacking is an effective approach to producing well-defined single-crystalline nanoor microstructures for p-conjugated organic molecules in the solution phase. Among p-conjugated organic materials, pentacene, a fused-ring polycyclic aromatic hydrocarbon, is regarded as one of the most promising materials for use in organic electronics, because of its excellent semiconducting behavior, which is comparable to that of hydrogenated amorphous silicon (a-Si:H). However, the structural analysis of p-conjugated organic materials such as acenes has shown that their crystal structures adopt the so-called “herringbone” motif in which the molecules are packed more or less edge-to-face in 2D layers. However, this edge-to-face packing minimizes the p-overlap between adjacent molecules, resulting in relatively low mobilities. It has been suggested that it might be possible to achieve higher mobilities by designing p-conjugated molecules that stack face-to-face (p-stacking) in the solid state, thus increasing the intermolecular interactions. In other words, a cofacial p-stacked structure is expected to provide more efficient p-orbital overlap, thereby facilitating charge transport. Simulations have shown that halogen groups promote p-stacking and that one or more substitutions of relatively bulky groups into the peripositions of the polyacenes disrupts the herringbone structure of these compounds. In this study, therefore, the properties of triisopropylsilylethynyl pentacene (TIPS-PEN) were investigated, as suggested by Anthony and co-workers, because of its solution processability, significantly greater p-orbital overlap, and lower interplanar spacing, than unsubstituted pentacene. Some previous research has focused on the fabrication of thin films and bulk materials using TIPS-PEN molecules, however, the 1D self-assembled single-crystalline nanoor microstructures (i.e., the intermediate state between free molecules and bulk materials) of TIPS-PEN molecules have not yet been studied. In this study, 1D single-crystalline microribbons of TIPS-PEN with structural perfectness comparable to that of inorganic single crystals were easily prepared by using the specific-solvent-exchange method in the solution phase, and OFETs based on individual microribbons with hitherto unreported high performance were fabricated. The TIPS-PEN microribbons were prepared from TIPSPEN powder as the starting material by using the solvent-exchange method in the solution phase (for details, see the Experimental section). The conformational flexibility of the triisopropylsilyl side group of the TIPS-PEN molecule (Fig. 1) gives it sufficient solubility in hydrophobic solvents such as toluene, and the increased density of the bulky groups enables the tight packing of the pentacene backbones to maximize the p–p interactions. As a result, the TIPS-PEN molecule becomes insoluble in more polar solvents such as acetonitrile. As shown in Figure 1B, the injection of a minimum volume of concentrated toluene solution of TIPS-PEN into acetonitrile led to the formation of nanocrystals through self-assembly and the growth of a microribbon in the closed chamber (Fig. 1C). Figure S1 (Supporting Information) shows the C O M M U N IC A TI O N

346 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
Network Information
Related Institutions (5)
KAIST
77.6K papers, 1.8M citations

93% related

Nanyang Technological University
112.8K papers, 3.2M citations

91% related

Georgia Institute of Technology
119K papers, 4.6M citations

91% related

Hong Kong University of Science and Technology
52.4K papers, 1.9M citations

90% related

IBM
253.9K papers, 7.4M citations

90% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,060
20205,735
20195,994
20185,885