Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Nonvolatile memory device and method for fabricating the same

Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

Wearable electronic device

Abstract: In one embodiment, a device includes a device body that includes a touch-sensitive display and a processor. The device also includes a band coupled to the device body and an optical sensor in or on the band. The optical sensor faces outward from the band and captures images. The processor communicates with the optical sensor to process captured images.

Method of dividing screen areas and mobile terminal employing the same

Abstract: A method of supporting divided screen areas and a mobile terminal employing the same are disclosed. The method includes: generating input signals for one of sequentially and simultaneously activating a plurality of user functions; activating the user functions according to generated input signals; dividing a screen into divided screen areas that correspond to activated user functions; and outputting functional view areas associated with the activated user functions to the corresponding divided screen areas.

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

Abstract: Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one No signal of inter-layer interference has been observed Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array