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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Patent
Dong-un Jin1, Woo-jong Lee1, Yang-Wan Kim1, Young-Sik Kim1, Jun-Sang Lyu1, Sang-Min Kim1 
15 May 2012
TL;DR: In this article, a flexible display panel including a flexible substrate including a first region, second regions that extend from the first region and have a curved surface, and a third region folded towards the second regions is described.
Abstract: A flexible display panel including: a flexible substrate including a first region, second regions that extend from the first region and that have a curved surface, and a third region folded towards the second regions; a first display region in the first region of the flexible substrate; a second display region in the second regions of the flexible substrate; a plurality of non-display regions outside the first display region or the second display regions, wherein at least one of the plurality of non-display regions is in the third region of the flexible substrate; and an encapsulation member for encapsulating the first display region and the second display regions.

295 citations

Journal ArticleDOI
TL;DR: The open-circuit voltage was found to increase proportionally with reductions in QD size, which may relate to a bandgap widening effect in Si QDs or an improved heterojunction field allowing a greater split of the Fermi levels in the Si substrate.
Abstract: Silicon (Si) quantum dot (QD) materials have been proposed for 'all-silicon' tandem solar cells. In this study, solar cells consisting of phosphorus-doped Si QDs in a SiO2 matrix deposited on p-type crystalline Si substrates (c-Si) were fabricated. The Si QDs were formed by alternate deposition of SiO2 and silicon-rich SiOx with magnetron co-sputtering, followed by high-temperature annealing. Current tunnelling through the QD layer was observed from the solar cells with a dot spacing of 2 nm or less. To get the required current densities through the devices, the dot spacing in the SiO2 matrix had to be 2 nm or less. The open-circuit voltage was found to increase proportionally with reductions in QD size, which may relate to a bandgap widening effect in Si QDs or an improved heterojunction field allowing a greater split of the Fermi levels in the Si substrate. Successful fabrication of (n-type) Si QD/(p-type) c-Si photovoltaic devices is an encouraging step towards the realization of all-silicon tandem solar cells based on Si QD materials.

294 citations

Journal ArticleDOI
TL;DR: In this paper, a GaInN-based white light-emitting diodes (LEDs) employing a large separation between the primary LED emitter and the wavelength converter, and a diffuse reflector cup, is reported.
Abstract: Enhancement of phosphor efficiency is reported for GaInN-based white light-emitting diodes (LEDs) employing a large separation between the primary LED emitter and the wavelength converter, and a diffuse reflector cup. Ray-tracing simulations show that extraction efficiency of wavelength-converted light is enhanced by 75%. The experimental improvement in phosphor efficiency of blue-pumped yellow phosphor is 15.4% compared with conventional phosphor-based white LEDs. The improvement is attributed to reduced re-absorption of wavelength-converted light by the LED chip.

294 citations

Patent
14 Oct 2010
TL;DR: A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (CF) 1: as discussed by the authors, is represented by a compound for a photoelectric system.
Abstract: A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1:

293 citations

Journal ArticleDOI
Hong-Sun Park1, Chong-Eun Kim2, Chol-Ho Kim1, Gun-Woo Moon1, Joong-Hui Lee3 
TL;DR: A modularized charge equalizer for an HEV battery pack that is modularized into M*N cells, where M is the number of modules in the string and N is theNumber of cells in each module, so that low voltage stress on the electronic devices can be achieved.
Abstract: Based on the fact that a hybrid electric vehicle (HEV) connects a high number of batteries in series to obtain more than approximately 300 V, this paper proposes a modularized charge equalizer for an HEV battery pack. In this paper, the overall battery string is modularized into M*N cells, where M is the number of modules in the string and N is the number of cells in each module. With this modularization, low voltage stress on the electronic devices can be achieved, which means that there is less chance of a failure on the charge equalizer. The power rating selection is one of the most important design issues for a charge equalizer because it is very closely related to equalization time. To solve this problem optimally, this paper presents a power rating design guide. In addition, this paper considers system-level design issues, such as cell voltage acquisition, equalizer control logic, and system-level grounding. The simulation and experimental results are presented to show the usefulness of the optimal power rating selection guide and the low voltage stressed charge equalization process.

291 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,059
20205,735
20195,994
20185,885