Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

5G 3GPP-Like Channel Models for Outdoor Urban Microcellular and Macrocellular Environments

Abstract: For the development of new 5G systems to operate in bands up to 100 GHz, there is a need for accurate radio propagation models at these bands that currently are not addressed by existing channel models developed for bands below 6 GHz. This document presents a preliminary overview of 5G channel models for bands up to 100 GHz. These have been derived based on extensive measurement and ray tracing results across a multitude of frequencies from 6 GHz to 100 GHz, and this document describes an initial 3D channel model which includes: 1) typical deployment scenarios for urban microcells (UMi) and urban macrocells (UMa), and 2) a baseline model for incorporating path loss, shadow fading, line of sight probability, penetration and blockage models for the typical scenarios. Various processing methodologies such as clustering and antenna decoupling algorithms are also presented.

Apparatus and method for measuring quantity of physical exercise using acceleration sensor

Abstract: Disclosed are a method for measuring quantity of exercise and an apparatus comprising an acceleration sensor for generating acceleration information by measuring the quantity of exercise according to user movement, sensor control unit for supplying power to the acceleration sensor and sampling the acceleration information generated from the acceleration sensor, a dynamic energy measurement unit for converting the sampled acceleration information into dynamic energy, comparing a local maximum value with a predetermined threshold value if an ascending gradient of the dynamic energy has the local maximum value exceeding a pre-determined value and determining a user step if the local maximum value exceeds the predetermined threshold value, a calorie consumption measurement unit for calculating calorie consumption by analyzing an energy level of dynamic energy determined as a user step, a memory for storing information, and a display section for displaying information related to the number of steps and calorie consumption.

Efficient and stable blue quantum dot light-emitting diode.

Abstract: The visualization of accurate colour information using quantum dots has been explored for decades, and commercial products employing environmentally friendly materials are currently available as backlights1. However, next-generation electroluminescent displays based on quantum dots require the development of an efficient and stable cadmium-free blue-light-emitting device, which has remained a challenge because of the inferior photophysical properties of blue-light-emitting materials2,3. Here we present the synthesis of ZnSe-based blue-light-emitting quantum dots with a quantum yield of unity. We found that hydrofluoric acid and zinc chloride additives are effective at enhancing luminescence efficiency by eliminating stacking faults in the ZnSe crystalline structure. In addition, chloride passivation through liquid or solid ligand exchange leads to slow radiative recombination, high thermal stability and efficient charge-transport properties. We constructed double quantum dot emitting layers with gradient chloride content in a light-emitting diode to facilitate hole transport, and the resulting device showed an efficiency at the theoretical limit, high brightness and long operational lifetime. We anticipate that our efficient and stable blue quantum dot light-emitting devices can facilitate the development of electroluminescent full-colour displays using quantum dots. Cadmium-free blue quantum dot light-emitting diodes are constructed with a quantum yield of unity, an efficiency at the theoretical limit, high brightness and long operational lifetime.

Three-dimensional semiconductor memory device and method of fabricating the same

Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.