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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Patent
21 Jul 2008
TL;DR: In this article, a chemical vapor deposition (CVD) system with a substrate-supporting member for supporting a substrate is described, which is capable of improving the yield by an extension of a cleaning cycle.
Abstract: A chemical vapor deposition apparatus is disclosed, which is capable of improving the yield by an extension of a cleaning cycle, the chemical vapor deposition apparatus comprising a chamber with a substrate-supporting member for supporting a substrate; a chamber lid with plural first source supplying holes, the chamber lid installed over the chamber; plural source supplying pipes for supplying a process source to the plural first source supplying holes; a spraying-pipe supporting member with plural second source supplying holes corresponding to the plural first source supplying holes, the spraying-pipe supporting member detachably installed in the chamber lid; and plural source spraying pipes with plural third source supplying holes and plural source spraying holes, the plural source spraying pipes supported by the spraying-pipe supporting member, wherein the plural third source supplying holes are supplied with the process source through the plural second source supplying holes, and the plural source spraying holes are provided to spray the process source onto the substrate

263 citations

Journal ArticleDOI
TL;DR: The proposed method can work in tandem with human radiologists to improve performance, which is a fundamental purpose of computer-aided diagnosis.
Abstract: In this research, we exploited the deep learning framework to differentiate the distinctive types of lesions and nodules in breast acquired with ultrasound imaging. A biopsy-proven benchmarking dataset was built from 5151 patients cases containing a total of 7408 ultrasound breast images, representative of semi-automatically segmented lesions associated with masses. The dataset comprised 4254 benign and 3154 malignant lesions. The developed method includes histogram equalization, image cropping and margin augmentation. The GoogLeNet convolutionary neural network was trained to the database to differentiate benign and malignant tumors. The networks were trained on the data with augmentation and the data without augmentation. Both of them showed an area under the curve of over 0.9. The networks showed an accuracy of about 0.9 (90%), a sensitivity of 0.86 and a specificity of 0.96. Although target regions of interest (ROIs) were selected by radiologists, meaning that radiologists still have to point out the location of the ROI, the classification of malignant lesions showed promising results. If this method is used by radiologists in clinical situations it can classify malignant lesions in a short time and support the diagnosis of radiologists in discriminating malignant lesions. Therefore, the proposed method can work in tandem with human radiologists to improve performance, which is a fundamental purpose of computer-aided diagnosis.

263 citations

Patent
22 Dec 2010
TL;DR: In this paper, an organic light emitting display (OLED) is proposed to reduce power consumption by sequentially supplying scan signals to scan lines, data driver for supplying data signals to data lines in synchronization with the scan signals, pixels located at crossing regions of the scan lines and the data lines, a timing controller for determining a normal driving mode for displaying a normal image and a standby driving mode displaying less information than the normal image, and a power source for supplying a first power and a second power to the pixels.
Abstract: An organic light emitting display is capable of reducing power consumption. The organic light emitting display includes a scan driver for sequentially supplying scan signals to scan lines, a data driver for supplying data signals to data lines in synchronization with the scan signals, pixels located at crossing regions of the scan lines and the data lines, a timing controller for determining a normal driving mode for displaying a normal image and a standby driving mode displaying less information than the normal image, and a power source for supplying a first power and a second power to the pixels, wherein a voltage difference between the first power and the second power in the normal driving mode is a first voltage, and a voltage difference between the first power and the second power is a second voltage different from the first voltage.

263 citations

Proceedings ArticleDOI
14 Jun 2005
TL;DR: In this paper, a ring-shaped contact structure was proposed to improve the contact area distribution even at the smallest contact diameter of 50nm node and the validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10/spl mu/m CMOS technology.
Abstract: Novel small contact fabrication technologies were proposed to realize reliable high density 256Mb PRAM(phase change memory) product. Introducing the 2-step CMP (chemical mechanical polishing) process and the ring-shaped contact structure, the contact area distribution was greatly improved even at the smallest contact diameter of 50nm node. The validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10/spl mu/m CMOS technology.

263 citations

Journal ArticleDOI
TL;DR: A two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack, demonstrates an ultimately low off-state current of 10−14 A, leading to ultrahigh on/off ratio over 109, about ∼103 times higher than other two-Terminal memories.
Abstract: Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10(-14) A, leading to ultrahigh on/off ratio over 10(9), about ∼10(3) times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics.

262 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,059
20205,735
20195,994
20185,885