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Institution

Samsung

CompanySeoul, South Korea
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.


Papers
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Patent
27 Jan 2014
TL;DR: In this paper, a robot cleaner performs cleaning using zigzag travel as a basic cleaning traveling manner, and then performs random traveling as a finishing cleaning travelling manner so as to clean areas skipped during the zigzag travel.
Abstract: Disclosed herein are a robot cleaner having an improved travel pattern and a control method thereof. The robot cleaner performs cleaning using zigzag travel as a basic cleaning traveling manner, and then performs cleaning using random travel as a finishing cleaning traveling manner so as to clean areas skipped during the zigzag travel. The robot cleaner performs the zigzag travel while maintaining a designated interval with a travel route proceeding to a wall regardless of a direction proceeding to the wall, and employs an improved zigzag travel method to maintain a zigzag travel pattern, if the robot cleaner senses an obstacle during the zigzag travel.

262 citations

Proceedings ArticleDOI
01 Dec 2006
TL;DR: In this paper, a 3D-stacked NAND cell array is developed by implementing S3 (Single-crystal Si layer Stacking) technology, which was used to develop S3 SRAM previously.
Abstract: For the first time, the 3 dimensionally stacked NAND Flash memory, is developed by implementing S3 (Single-crystal Si layer Stacking ) technology, which was used to develop S3 SRAM previously. The NAND cell arrays are formed on the ILD as well as on the bulk to double the memory density without increasing the chip size. The feasibility of the technology was proven by the successful operation of 32 bit NAND Flash memory cell strings with 63nm dimension and TANOS structures. The novel NAND cell operational scheme, so called SBT (Source-Body Tied) scheme, is presented to maximize the advantages of 3 dimensionally stacked NAND cell structures.

262 citations

Patent
06 Feb 2007
TL;DR: In this paper, a method of writing data in a flash memory system is provided, which includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing patterns of the data.
Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

261 citations

Journal ArticleDOI
01 Aug 2014-ACS Nano
TL;DR: The device design described here presents a significant step toward high-performance 2D nanomaterial-based photodetector and shows an enhanced performance with a broad spectral photoresponse and a high photoresponsivity compared with the properties of the pristine MoS2Photodetectors.
Abstract: We fabricated dye-sensitized MoS2 photodetectors that utilized a single-layer MoS2 treated with rhodamine 6G (R6G) organic dye molecules (with an optical band gap of 2.38 eV or 521 nm). The proposed photodetector showed an enhanced performance with a broad spectral photoresponse and a high photoresponsivity compared with the properties of the pristine MoS2 photodetectors. The R6G dye molecules deposited onto the MoS2 layer increased the photocurrent by an order of magnitude due to charge transfer of the photoexcited electrons from the R6G molecules to the MoS2 layer. Importantly, the photodetection response extended to the infrared (λ < 980 nm, which corresponded to about half the energy band gap of MoS2), thereby distinguishing the device performance from that of a pristine MoS2 device, in which detection was only possible at wavelengths shorter than the band gap of MoS2, i.e., λ < 681 nm. The resulting device exhibited a maximum photoresponsivity of 1.17 AW–1, a photodetectivity of 1.5 × 107 Jones, and ...

261 citations

Journal ArticleDOI
TL;DR: The proposed frame rate up-conversion algorithm does not produce any overlapped pixel and hole region in the interpolated frame, and thus can utilize the overlapped block motion compensation technique to reduce the blocking artifacts.
Abstract: We propose a new frame rate up-conversion algorithm for high quality video. In the proposed scheme, bi-directional motion estimation (ME) is performed to construct the motion vector (MV) field for the frame to be interpolated. Unlike conventional motion-compensated interpolation (MCI) algorithms, the proposed technique does not produce any overlapped pixel and hole region in the interpolated frame, and thus can utilize the overlapped block motion compensation technique to reduce the blocking artifacts. The proposed algorithm is very simple to implement on consumer products when compared to conventional MCI methods. Computer simulation shows a high visual performance of the proposed frame rate up-conversion algorithm.

261 citations


Authors

Showing all 134111 results

NameH-indexPapersCitations
Yi Cui2201015199725
Hyun-Chul Kim1764076183227
Hannes Jung1592069125069
Yongsun Kim1562588145619
Yu Huang136149289209
Robert W. Heath128104973171
Shuicheng Yan12381066192
Shi Xue Dou122202874031
Young Hee Lee122116861107
Alan L. Yuille11980478054
Yang-Kook Sun11778158912
Sang Yup Lee117100553257
Guoxiu Wang11765446145
Richard G. Baraniuk10777057550
Jef D. Boeke10645652598
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20239
202289
20213,059
20205,735
20195,994
20185,885