Samsung

About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.

Content-Based Image Retrieval Using Multiresolution Color and Texture Features

Abstract: In this paper, we propose a content-based image retrieval method based on an efficient combination of multiresolution color and texture features. As its color features, color autocorrelo- grams of the hue and saturation component images in HSV color space are used. As its texture features, BDIP and BVLC moments of the value component image are adopted. The color and texture features are extracted in multiresolution wavelet domain and combined. The dimension of the combined feature vector is determined at a point where the retrieval accuracy becomes saturated. Experimental results show that the proposed method yields higher retrieval accuracy than some conventional methods even though its feature vector dimension is not higher than those of the latter for six test DBs. Especially, it demonstrates more excellent retrieval accuracy for queries and target images of various resolutions. In addition, the proposed method almost always shows performance gain in precision versus recall and in ANMRR over the other methods.

Non-volatile memory device and method of fabricating the same

Abstract: Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

Quantum-Dot-Sensitized Solar Cell with Unprecedentedly High Photocurrent

Abstract: The reported photocurrent density (JSC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high JSC of 30 mA/cm2. By Hg2+ doping into PbS, JSC is almost doubled with improved stability. Femtosecond transient study confirms that the improved JSC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high JSC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

First-principles study on doping and phase stability of HfO 2

Abstract: Based on density functional methods, relative stabilities between monoclinic, tetragonal, and cubic phases of ${\text{HfO}}_{2}$ with cation dopants or oxygen vacancies are investigated. It is found that dopants such as Si, Ge, Sn, P, Al or Ti with ionic radii smaller than Hf stabilize the tetragonal phase but destabilize the cubic phase. In contrast, larger dopants such as Y, Gd or Sc favor the cubic phase. The ionized oxygen vacancies compensating trivalent dopants greatly stabilize both cubic and tetragonal phases. Microscopic explanations on the results are also given. The metastable phase favored by each dopant is in good agreement with experimental data. Our results can serve as a useful guide in selecting dopants to stabilize a specific phase.

Analytical investigation of spin-transfer dynamics using a perpendicular-to-plane polarizer

Abstract: We studied current-induced magnetic switching and excitations in structures comprising a free layer with in-plane magnetization traversed by a current with perpendicular-to-plane spin polarization. We derived analytical solutions from the Landau–Lifshitz–Gilbert equation including the spin-torque term, and compared them to numerical simulations within the single domain assumption. Taking into account the criterion of thermal stability, the magnetization switching in nanostructures of typical size below 100nm comprising a perpendicular polarizer is found to require larger current density but to be much faster than with a longitudinal polarizer. Furthermore, a steady precession of magnetization can be generated in this geometry; those frequencies can be tuned from about 1 to 20GHz by only changing the current without applying any external field. This opens a promising application as microwave sources.