Institution
Samsung
Company•Seoul, South Korea•
About: Samsung is a company organization based out in Seoul, South Korea. It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 134067 authors who have published 163691 publications receiving 2057505 citations. The organization is also known as: Samsung Group & Samsung chaebol.
Papers published on a yearly basis
Papers
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05 Sep 2013TL;DR: In this article, a method and apparatus for excluding a cross-connected wireless power receiver in a wireless power transmitter is provided, which includes determining transmission power while the wireless transmitter is connected to the wireless power receivers, transferring the determined transmission power to the receiver, determining whether the power-receiving state indicated by the report is within a valid range corresponding to the transmission power, and terminating the connection to the power receiver if the power receiving state is outside of the valid range.
Abstract: A method and apparatus for excluding a cross-connected wireless power receiver in a wireless power transmitter is provided. The method includes determining transmission power while the wireless power transmitter is connected to the wireless power receiver; transferring the determined transmission power to the wireless power receiver; receiving a report indicating a power-receiving state from the wireless power receiver; determining whether the power-receiving state indicated by the report is within a valid range corresponding to the transmission power; and terminating the connection to the wireless power receiver if the power-receiving state is outside of the valid range.
249 citations
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248 citations
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TL;DR: In this paper, a nanocomposite material system having a superior surface charge density as a triboelectric active material is reported, which consists of a high dielectric ceramic material, barium titanate, showing great charge-trapping capability, together with a ferroelectric copolymer matrix, Poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)).
Abstract: Low output current represents a critical challenge that has interrupted the use of triboelectric nanogenerators (TNGs) in a wide range of applications as sustainable power sources. Many approaches (e.g., operation at high frequency, parallel stacks of individual devices, and hybridization with other energy harvesters) remain limited in solving the challenge of low output current from TNGs. Here, a nanocomposite material system having a superior surface charge density as a triboelectric active material is reported. The nanocomposite material consists of a high dielectric ceramic material, barium titanate, showing great charge-trapping capability, together with a ferroelectric copolymer matrix, Poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)), with electrically manipulated polarization with strong triboelectric charge transfer characteristics. Based on a contact potential difference study showing that poled P(VDF-TrFE) has 18 times higher charge attracting properties, a fraction between two components is optimized. Boosting power-generating performance is achieved for 1130 V of output voltage and 1.5 mA of output current with this ferroelectric composite-based TNG, under 6 kgf of pushing force at 5 Hz. An enormously faster charging property than traditional polymer film-based TNGs is demonstrated in this study. Finally, the charging of a self-powering smartwatch with a charging management circuit system with no external power sources is demonstrated successfully.
248 citations
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14 Jun 2005TL;DR: In this paper, an on-axis confined structure is proposed for high density PRAM due to low writing current, good scalability, and insensitiveness to edge damage, which is relatively insensitive to small cell edge damage effect.
Abstract: We firstly fabricated on-axis confined structure and evaluated based on 64Mb PRAM with 0.12/spl mu/m-CMOS technologies. Ge/sub 2/Sb/sub 2/Te /sub 5/ was confined within small pore, which resulted in low writing current of 0.4mA. The pore is on-axis with upper and lower contacts, which leads to good scalability of PRAM above 256Mb. The confined structure was relatively insensitive to small cell edge damage effect. The on-axis confined structure is a promising candidate for high density PRAM due to low writing current, good scalability, and insensitiveness to edge damage.
248 citations
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TL;DR: In this paper, a triplet-exciton-distributed TADF was proposed to achieve both high efficiency and long lifetime in deep-blue organic light-emitting diodes.
Abstract: Simultaneously achieving both a high efficiency and long lifetime in deep-blue organic light-emitting diodes is challenging. Here we report thermally activated delayed fluorescence (TADF) organic light-emitting diodes that aim to meet this goal by combining a new design of blue TADF materials with a triplet-exciton recycling protocol. Two TADF materials, one distributing and one emitting, were doped into a host to form triplet-exciton-distributed TADF devices. The singlet excitons were transferred from the host to the emitter via the distributing TADF material by cascade energy transfer, whereas the triplet excitons were transferred to the emitter as singlet excitons by a triplet-exciton recycling process between the low-triplet-energy host and the distributing TADF material. The resulting triplet-exciton-distributed TADF devices achieved a high external quantum efficiency of 33.5 ± 0.1, a colour coordinate corrected current efficiency over 400 cd A–1, a lifetime of >5,000 h and a y colour coordinate below 0.10. Exciton energy cascade transfer and recycling bring improvements in the efficiency and lifetime of deep-blue organic light-emitting diodes.
248 citations
Authors
Showing all 134111 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yi Cui | 220 | 1015 | 199725 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Hannes Jung | 159 | 2069 | 125069 |
Yongsun Kim | 156 | 2588 | 145619 |
Yu Huang | 136 | 1492 | 89209 |
Robert W. Heath | 128 | 1049 | 73171 |
Shuicheng Yan | 123 | 810 | 66192 |
Shi Xue Dou | 122 | 2028 | 74031 |
Young Hee Lee | 122 | 1168 | 61107 |
Alan L. Yuille | 119 | 804 | 78054 |
Yang-Kook Sun | 117 | 781 | 58912 |
Sang Yup Lee | 117 | 1005 | 53257 |
Guoxiu Wang | 117 | 654 | 46145 |
Richard G. Baraniuk | 107 | 770 | 57550 |
Jef D. Boeke | 106 | 456 | 52598 |