Sandia National Laboratories

About: Sandia National Laboratories is a facility organization based out in Livermore, California, United States. It is known for research contribution in the topics: Laser & Thin film. The organization has 21501 authors who have published 46724 publications receiving 1484388 citations. The organization is also known as: SNL & Sandia National Labs.

A survey of information authentication

Abstract: The general principles that underlie all authentication schemes are reviewed and illustrated using the examples of an early telegraphy cable code, a US military authentication protocol, and authentication of electronic funds transfers in the US Federal Reserve System. Authentication threats from inside the system (i.e. untrustworthy sender or receiver) are described. The classification of authentication schemes as computationally secure, provably secure, or unconditionally secure is explained, and theoretical results are presented showing that a large number of encoding rules must be available in any unconditionally secure authentication code. Current authentication practices are examined. >

Influence of microstructure on high-cycle fatigue of Ti-6Al-4V: Bimodal vs. lamellar structures

Abstract: The high-cycle fatigue (HCF) of titanium alloy turbine engine components remains a principal cause of failures in military aircraft engines. A recent initiative sponsored by the United States Air Force has focused on the major drivers for such failures in Ti-6Al-4V, a commonly used turbine blade alloy, specifically for fan and compressor blades. However, as most of this research has been directed toward a single processing/heat-treated condition, the bimodal (solution-treated and overaged (STOA)) microstructure, there have been few studies to examine the role of microstructure. Accordingly, the present work examines how the overall resistance to high-cycle fatigue in Ti-6Al-4V compares between the bimodal microstructure and a coarser lamellar (β-annealed) microstructure. Several aspects of the HCF problem are examined. These include the question of fatigue thresholds for through-thickness large and short cracks; microstructurally small, semi-elliptical surface cracks; and cracks subjected to pure tensile (mode I) and mixed-mode (mode I+II) loading over a range of load ratios (ratio of minimum to maximum load) from 0.1 to 0.98, together with the role of prior damage due to sub-ballistic impacts (foreign-object damage (FOD)). Although differences are not large, it appears that the coarse lamellar microstructure has improved smooth-bar stress-life (S-N) properties in the HCF regime and superior resistance to fatigue-crack propagation (in pure mode I loading) in the presence of cracks that are large compared to the scale of the microstructure; however, this increased resistance to crack growth compared to the bimodal structure is eliminated at extremely high load ratios. Similarly, under mixed-mode loading, the lamellar microstructure is generally superior. In contrast, in the presence of microstructurally small cracks, there is little difference in the HCF properties of the two microstructures. Similarly, resistance to HCF failure following FOD is comparable in the two microstructures, although a higher proportion of FOD-induced microcracks are formed in the lamellar structure following high-velocity impact damage.

Atomistic simulations of elastic deformation and dislocation nucleation during nanoindentation

Abstract: Nanoindentation experiments have shown that microstructural inhomogeneities across the surface of gold thin films lead to position-dependent nanoindentation behavior [Phys. Rev. B (2002), to be submitted]. The rationale for such behavior was based on the availability of dislocation sources at the grain boundary for initiating plasticity. In order to verify or refute this theory, a computational approach has been pursued. Here, a simulation study of the initial stages of indentation using the embedded atom method (EAM) is presented. First, the principles of the EAM are given, and a comparison is made between atomistic simulations and continuum models for elastic deformation. Then, the mechanism of dislocation nucleation in single crystalline gold is analyzed, and the effects of elastic anisotropy are considered. Finally, a systematic study of the indentation response in the proximity of a high angle, high sigma (low symmetry) grain boundary is presented; indentation behavior is simulated for varying indenter positions relative to the boundary. The results indicate that high angle grain boundaries are a ready source of dislocations in indentation-induced deformation.

Memory Errors in Modern Systems: The Good, The Bad, and The Ugly

Abstract: Several recent publications have shown that hardware faults in the memory subsystem are commonplace. These faults are predicted to become more frequent in future systems that contain orders of magnitude more DRAM and SRAM than found in current memory subsystems. These memory subsystems will need to provide resilience techniques to tolerate these faults when deployed in high-performance computing systems and data centers containing tens of thousands of nodes. Therefore, it is critical to understand the efficacy of current hardware resilience techniques to determine whether they will be suitable for future systems. In this paper, we present a study of DRAM and SRAM faults and errors from the field. We use data from two leadership-class high-performance computer systems to analyze the reliability impact of hardware resilience schemes that are deployed in current systems. Our study has several key findings about the efficacy of many currently deployed reliability techniques such as DRAM ECC, DDR address/command parity, and SRAM ECC and parity. We also perform a methodological study, and find that counting errors instead of faults, a common practice among researchers and data center operators, can lead to incorrect conclusions about system reliability. Finally, we use our data to project the needs of future large-scale systems. We find that SRAM faults are unlikely to pose a significantly larger reliability threat in the future, while DRAM faults will be a major concern and stronger DRAM resilience schemes will be needed to maintain acceptable failure rates similar to those found on today's systems.