Sandia National Laboratories

About: Sandia National Laboratories is a facility organization based out in Livermore, California, United States. It is known for research contribution in the topics: Laser & Combustion. The organization has 21501 authors who have published 46724 publications receiving 1484388 citations. The organization is also known as: SNL & Sandia National Labs.

Electronic Structure of a "Poisoned" Transition-Metal Surface

Abstract: The authors report self-consistent linearized-augmented-plane-wave calculations of the electronic structure perturbations induced by a catalytic ''poison,'' S, on a Rh(001) surface, focusing particularly on their distance dependence. The S-induced charge density vanishes beyond the immediately adjacent Rh atoms. However, the Fermi-level density of states, which is not screened, and which governs the ability of the surface to respond to the presence of other species, is substantially reduced by the S even at nonadjacent sites.

Equation of state measurements in liquid deuterium to 70 GPa.

Abstract: Using intense magnetic pressure, a method was developed to launch flyer plates to velocities in excess of $20\mathrm{km}/\mathrm{s}$. This technique was used to perform plate-impact, shock wave experiments on cryogenic liquid deuterium ( $L\ensuremath{-}{\mathrm{D}}_{2}$) to examine its high-pressure equation of state. Using an impedance matching method, Hugoniot measurements were obtained in the pressure range of $30--70\mathrm{GPa}$. The results of these experiments disagree with previously reported Hugoniot measurements of $L\ensuremath{-}{\mathrm{D}}_{2}$ in the pressure range above $\ensuremath{\sim}40\mathrm{GPa}$, but are in good agreement with first principles, ab initio models for hydrogen and its isotopes.

Extended spectral analysis of internal quantum efficiency

Abstract: A powerful new method for identifying the performance-limiting mechanisms in silicon solar cells has been developed and tested at Sandia. This method uses the internal quantum efficiency (IQE) of the device at both near-infrared and near-bandgap wavelengths. The conventional interpretation of IQE is expanded to accommodate textured surfaces and long diffusion lengths, and extended to near-bandgap wavelengths where internal optical effects play an important role. This paper describes how the information available from this extended analysis can be used to obtain a value for the internal optical reflectance of the back surface, and to separate the effects of diffusion length from back-surface recombination. Results from experimental tests verify the method. The information obtained can be used to compute recombination components for the cell, and to quantify the light-trapping effectiveness of the device. >

Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics

Abstract: The study of the electronic, thermal and optical properties of dysprosium-doped cadmium oxide reveals high electron mobility, rendering the material suitable for plasmonic applications in the mid-infrared region.