Showing papers by "Solid State Physics Laboratory published in 2003"
TL;DR: In this paper, two new compounds of the Bi/Ca/Co/O and Bi(Pb)/Ca/co/O systems have been prepared, which are built up from the intergrowth of four rock-salt-type layers and one [CoO2] hexagonal layer.
Abstract: Two new compounds of the Bi/Ca/Co/O and Bi(Pb)/Ca/Co/O systems have been prepared. Their structure is built up from the intergrowth of four rock-salt-type layers and one [CoO2] hexagonal layer. Both cobaltites exhibit large thermopower values (S-300 K similar to 140 muV K-1), low resistivity values (rho(300) (K) 40-60 mOmega cm) and small thermal conductivities (kappa(300) (K) similar to I W K-1 m(-1)). Furthermore, these compounds exhibit a negative magnetoresistance, (MR = rho(H)-rho(H=0)/rho(H=0)), reaching, at 2.5 K, -85% in 7 T for the Bi/Ca/Co/O misfit cobaltite. A large negative magnetothermopower is also found for these cobaltites in the same temperature range. A qualitative explanation of the observed behaviour is proposed.
142 citations
TL;DR: Dense functional theory is used to compute the effect of both electron-phonon coupling and anharmonicity on the linewidth of MgB2, obtaining excellent agreement with experiment.
Abstract: We measure phonon dispersion and linewidth in a single crystal of MgB2 along the Gamma-A, Gamma-M, and A-L directions using inelastic x-ray scattering. We use density functional theory to compute the effect of both electron-phonon coupling and anharmonicity on the linewidth, obtaining excellent agreement with experiment. Anomalous broadening of the E(2g) phonon mode is found all along Gamma-A. The dominant contribution to the linewidth is always the electron-phonon coupling.
118 citations
TL;DR: In this paper, a model for microwave photoconductivity of two-dimensional electron systems in a magnetic field which describes the effects of strong microwave and steady-state electric fields is presented.
Abstract: We present a model for microwave photoconductivity of two-dimensional electron systems in a magnetic field which describes the effects of strong microwave and steady-state electric fields. Using this model, we derive an analytical formula for the photoconductivity associated with photon- and multi-photon-assisted impurity scattering as a function of the frequency and power of microwave radiation. According to the developed model, the microwave conductivity is an oscillatory function of the frequency of microwave radiation and the cyclotron frequency which becomes zero at the cyclotron resonance and its harmonics. It exhibits maxima and minima (with absolute negative conductivity) at microwave frequencies somewhat different from the resonant frequencies. The calculated power dependence of the amplitude of the microwave photoconductivity oscillations exhibits pronounced sublinear behaviour similar to a logarithmic function. The height of the microwave photoconductivity maxima and the depth of its minima are nonmonotonic functions of the electric field. The possibility of a strong widening of the maxima and minima due to a strong sensitivity of their parameters on the electric field and the presence of strong long-range electric-field fluctuations is pointed to. The obtained dependences are consistent with the results of the experimental observations.
91 citations
TL;DR: In this paper, a new deposition parameter has been extracted to deposit vanadium oxide thin films at room temperature for uncooled microbolometers, which is one of the vital bolometric parameters.
Abstract: Vanadium oxide thin films were deposited by pulsed laser deposition (PLD) technique using V 2O5 as target. A new deposition parameter has been extracted to deposit vanadium oxide thin films at room temperature for uncooled microbolometers. Temperature coefficient of resistance (TCR) is one of the vital bolometric parameters, which influences the performance of the uncooled microbolometer infrared detectors was determined. The TCR values of vanadium oxide films deposited by PLD at room temperature are coinciding with the reported TCR values of successful vanadium oxide thin films deposited at elevated temperatures by other techniques for bolometric applications. We further investigated the influence of laser fluence on the electrical property of the vanadium oxide films. © 2003 Elsevier B.V. All rights reserved.
79 citations
TL;DR: In this article, the feasibility of absolute negative conductivity (ANC) in two-dimensional electron systems (2DES's) stimulated by microwave radiation in a transverse magnetic field was discussed.
Abstract: We discuss the feasibility of absolute negative conductivity (ANC) in two-dimensional electron systems (2DES's) stimulated by microwave radiation in a transverse magnetic field. The mechanism of ANC under consideration is associated with electron scattering on acoustic phonons accompanied by absorption of microwave photons. It is demonstrated that the dissipative components of the 2DES dc conductivity can be negative $({\ensuremath{\sigma}}_{\mathrm{xx}}={\ensuremath{\sigma}}_{\mathrm{yy}}l0)$ due to negative values of the dc photoconductivity caused by microwave radiation at certain ratios of the microwave frequency $\ensuremath{\Omega}$ and the electron cyclotron frequency ${\ensuremath{\Omega}}_{c}.$ The phase of the oscillations of the dissipative dc photoconductivity associated with photon-assisted electron scattering on acoustic phonons is quite different from that in the case of the photon-assisted impurity scattering mechanism. The concept of ANC associated with an interplay of the scattering mechanisms can be invoked to explain the nature of the occurrence of zero-resistance ``dissipationless'' states observed in recent experiments.
72 citations
TL;DR: In this article, the authors developed a device model for a high-electron-mobility transistor (HEMT) affected by the incoming terahertz radiation, which takes into account the electron plasma oscillations in the HEMT channel, tunnelling of electrons from the channel into the gate layer and electron transit time effects in this layer.
Abstract: We develop a device model for a high-electron-mobility transistor (HEMT) affected by the incoming terahertz radiation. The model takes into account the electron plasma oscillations in the HEMT channel, tunnelling of electrons from the channel into the gate layer and electron transit-time effects in this layer. It is shown that the excitation of plasma oscillations accompanied by the delay in the electron propagation across the gate layer and a strong nonlinearity of the tunnelling current can result in significant features of the HEMT high-frequency linear and nonlinear characteristics. We derive a formula for the HEMT gate-to-source/drain admittance. We also calculate the variation of the dc current induced by the terahertz radiation and the HEMT detection responsivity. It is found that the detection responsivity exhibits sharp resonant peaks corresponding to the frequencies of plasma oscillations. The resonant plasma frequencies and the positions of the admittance and detection responsivity peaks depend on the gate length and the lengths of the contact regions (source-to-gate and gate-to-drain spacings) and can be tuned by the gate voltage. The coincidence of the plasma and transit-time resonances can lead to a marked sharpening of the responsivity peaks.
70 citations
TL;DR: In this paper, the authors investigated the temperature and field dependence of the anisotropy of BN and MgB2 with a high pressure cubic anvil technique and found that the upper critical field anisotropic γ = H//abc2/H//cc2 is temperature dependent (decreasing from γ 6 at 15 K to 2.8 at 35 K).
Abstract: Single crystals of MgB2 with a size up to 1.5 × 0.9 × 0.2 mm3 have been grown with a high pressure cubic anvil technique. The crystal growth process is very peculiar and involves an intermediate nitride, namely MgNB9. Single crystals of BN and MgB2 grow simultaneously by a peritectic decomposition of MgNB9. Magnetic measurements with SQUID magnetometry in fields of 1–5 Oe show sharp transitions to the superconducting state at 37–38.6 K with a width of ~0.5 K. The high quality of the crystals allowed the accurate determination of magnetic, transport (electric and heat) and optical properties as well as scanning tunnelling spectroscopy (STS) and decoration studies. Investigations of crystals with torque magnetometry show that H//cc2 for high quality crystals is very low (24 kOe at 15 K) and saturates with decreasing temperature, while H//abc2 increases up to 140 kOe at 15 K. The upper critical field anisotropy γ = H//abc2/H//cc2 was found to be temperature dependent (decreasing from γ 6 at 15 K to 2.8 at 35 K). The effective anisotropy γeff, as calculated from reversible torque data near Tc, is field dependent (increasing roughly linearly from γeff 2 in zero field to 3.7 in 10 kOe). The temperature and field dependence of the anisotropy can be related to the double gap structure of MgB2 with a large two-dimensional gap and small three-dimensional gap, the latter of which is rapidly suppressed in a magnetic field. Torque magnetometry investigations also show a pronounced peak effect, which indicates an order–disorder phase transition of vortex matter. Decoration experiments and STS visualize a hexagonal vortex lattice. STS spectra in zero field evidence two gaps 3 meV and 6 meV with a weight depending on the tunnelling direction. Magneto-optic investigations in the far-infrared region with H//c show a clear signature of the smaller of the two superconducting gaps, completely disappearing only in fields higher than H//cc2.
67 citations
TL;DR: In this article, the peritectic decomposition of MgNB 9 has been used to grow single crystals of the MgB 2 phase at high pressure via peritectural decomposition, which are of a size up to 1.5× 0.9×0.2 mm 3 with a weight up to 230 μg.
Abstract: Single crystals of MgB 2 have been grown at high pressure via the peritectic decomposition of MgNB 9 . The crystals are of a size up to 1.5×0.9×0.2 mm 3 with a weight up to 230 μg, and typically have transition temperatures between 37 and 39 K with a width of 0.3–0.5 K. Investigations of the P – T phase diagram prove that the MgB 2 phase is stable at least up to 2190 °C at high hydrostatic pressure in the presence of Mg vapor under high pressure. Small variations of T c are caused by doping with metal elements from the precursor or annealing of defects during the crystal growth process.
55 citations
TL;DR: In this article, the contribution of photon-assisted interaction of electrons with leaky interface phonons to the dissipative dc photoconductivity of a two-dimensional electron system in a magnetic field was calculated.
Abstract: We calculate the contribution of the photon-assisted interaction of electrons with leaky interface phonons to the dissipative dc photoconductivity of a two-dimensional electron system in a magnetic field. The calculated photoconductivity as a function of the frequency of microwave radiation and the magnetic field exhibits pronounced oscillations. The obtained oscillation structure is different from that in the case of photon-assisted interaction with impurities. We demonstrate that at a sufficiently strong microwave radiation in certain ranges of its frequency (or in certain ranges of the magnetic field) this mechanism can result in absolute negative conductivity.
55 citations
TL;DR: In this paper, the room temperature deposition of vanadium oxide thin films by pulsed laser deposition (PLD) technique for application as the thermal sensing layer in uncooled infrared (IR) detectors is demonstrated.
53 citations
TL;DR: In this article, the contribution of dark current contributing mechanisms can be separated from each other in each diode and an idea of the dominant mechanism of the two sources of the ohmic current, namely surface leakage currents and contribution of dislocations intersecting the junction can also be had from temperature dependent study of shunt impedance.
TL;DR: In this article, a 2D 10-element test microbolometer array was fabricated without an air-gap thermal isolation structure, which uses vanadium oxide film deposited by pulsed laser deposition at room temperature as the infrared (IR) sensitive layer.
Abstract: A 2D 10-element test microbolometer array was fabricated without an air-gap thermal isolation structure. The microbolometer uses vanadium oxide film deposited by pulsed laser deposition at room temperature as the infrared (IR) sensitive layer. The IR response of the uncooled microbolometer was evaluated in the spectral region of 8–15 μm. The detectivity and the responsivity were determined as ~ 6 × 105 cm Hz1/2 W−1 and 36 V W−1 respectively at a 10 Hz chopper frequency with 50 μA bias current for a thermal conductance G ~ 10−3 W K−1 between the thermal sensing layer and the substrate. The preliminary results for the test microbolometer array are discussed and compared with those for microbolometers fabricated on micromachined thermally isolated structures.
TL;DR: In this paper, the results of scanning tunneling spectroscopy measurements on single crystals of MgB2 were reported, where tunneling was performed both parallel and perpendicular to the crystalline c-axis.
Abstract: We report on the results of scanning tunneling spectroscopy measurements on single crystals of MgB2. Tunneling was performed both parallel and perpendicular to the crystalline c-axis. In the first case, a single superconducting gap (Δπ=2.2 meV) associated with the π-band is observed. Tunneling parallel to the ab-plane reveals an additional, larger gap (Δσ∼7 meV) originating in the highly 2D σ-band. Vortex imaging in the π-band was performed with the field and tunnel current parallel to the c-axis. The vortices have a large core size compared to estimates based on Hc2, and show an absence of localized states in the core. Furthermore, superconductivity between the vortices is rapidly suppressed by an applied field. A comparison to specific heat measurements is performed.
TL;DR: In this paper, compositional variation of AC resistivity is studied and values up to 103 times greater than those for samples prepared by the conventional ceramic method are observed, and it is found that resistivity decreases with increase in Mn concentration except for x=0.3, where it shows a rise.
TL;DR: It is shown that transport receptors that irreversibly bind FG-repeats increase NPC vertical aspect, whereas transport receptor that weakly interact with FG- Repeats increases NPC diameter, and small polar alcohols likewise increase NPC diameter.
TL;DR: In this paper, the authors present a study of magneto-thermal instabilities in polycrystalline MgB2 superconductor, by magnetic hysteresis loop measurements and by investigations of magnetic flux dynamics with a miniature Hall probe.
Abstract: We present a study of magneto-thermal instabilities in polycrystalline MgB2 superconductor, by magnetic hysteresis loop measurements and by investigations of magnetic flux dynamics with a miniature Hall probe. Temperature and magnetic field ranges where the flux jumps may be observed have been determined. On the basis of measurements of the magnetic flux dynamics, an average magnetic diffusivity describing the process of the flux jump is estimated. This parameter is compared with the thermal and magnetic diffusivities calculated on the basis of available data for thermal conductivity, heat capacity and resistivity. It is shown that the estimated value of the field of the first flux jump is influenced significantly by the field dependence of specific heat. In order to explain the observed phenomenon, the temperature reached by the sample during the flux jump at different magnetic fields is calculated.
TL;DR: In the region between peak onset and peak onset, pronounced history effects occur Angle and temperature dependence of the characteristic peak fields track those of the original Bragg glass and a highly disordered phase transition.
Abstract: Measurements of single crystal ${\mathrm{MgB}}_{2}$ with torque magnetometry in fields up to 90 kOe reveal a sharp peak in the irreversible torque at about $085{H}_{c2}$ In the region between peak onset and maximum, pronounced history effects occur Angle and temperature dependence of the characteristic peak fields track those of ${H}_{c2}$ The features observed suggest that the peak marks a disorder-induced phase transition of vortex matter between a quasiordered Bragg glass and a highly disordered phase
TL;DR: In this article, the structural and micro-structural properties of the Barium strontium titanate system were studied by varying the amount of Ba and Sr. The tunability of the system reached up to 42% for a particular composition with Ba/Sr ratio of 70:30.
TL;DR: In this paper, the authors investigated the defects created in optical grade fused silica due to 200 MeV silver ion irradiation, and the fluence dependent optical and paramagnetic behaviours of these defects were studied using UV-visible absorption spectroscopy, photoluminescence spectroscopic, infrared (IR) absorption and electron paramagnetic resonance.
Abstract: Investigation of defects created in optical grade fused silica due to 200 MeV silver ion irradiation is reported. Paramagnetically positively charged oxygen vacancies or neutral dangling Si bonds (E' centres), non-bridging oxygen hole centres (NBOHC) and non-paramagnetic defects like B2 bands are observed. The fluence dependent optical and paramagnetic behaviours of these defects are studied using UV–visible absorption spectroscopy, photoluminescence spectroscopy, infrared (IR) absorption and electron paramagnetic resonance. It is observed that generation of E' centres, NBOHC and B2 bands gets saturated beyond a fluence of 1 × 1012 ions cm−2. IR spectra showing saturation in transmission at this fluence also support this observation. At this fluence samples get fully covered with latent tracks containing these defects.
TL;DR: Wave-function and interaction effects in the addition spectrum of a Coulomb-blockaded many-electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field.
Abstract: Wave-function and interaction effects in the addition spectrum of a Coulomb-blockaded many-electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to the interaction are quantitatively evaluated at a crossing between states extended around the ring and states which are more localized in one arm of the ring. A gate tunable singlet-triplet transition of the two uppermost levels of this many-electron ring is identified at zero magnetic field.
TL;DR: In this article, the spin nature of the states at the top of the valence band in Nd2CuO4 and Nd1.85Ce0.15cuO4-delta has been investigated with spin polarized resonant photoemission, showing that the parent compound of this electron doped superconductor is similar to the parent compounds of hole doped cuprate superconductors.
Abstract: The spin nature of the states at the top of the valence band in Nd2CuO4 and Nd1.85Ce0.15CuO4-delta has been investigated with spin polarized resonant photoemission. A clear Zhang-Rice singlet state is observed at the top of the valence band in the undoped compound showing that the parent compound of this electron doped superconductor is similar to the parent compounds of hole doped cuprate superconductors. Upon doping, the stability of the singlet is destroyed and the optimum doped compound Nd1.85Ce0.15CuO4-delta does not display any well-separated singlet state. These results indicate that hole contribution to the superconductivity in this system is not important in contrast to what has previously been suggested on the bases of transport measurements.
TL;DR: In this paper, the infrared reflectivity spectra of manganites were measured in a wide frequency and temperature range, in a model that includes Drude, mid-infrared electronic, and phonon oscillator contributions to the dielectric constant.
Abstract: We have measured the infrared reflectivity spectra of ${\mathrm{La}}_{1\ensuremath{-}y}[\mathrm{Sr}(\mathrm{Ba}){]}_{y}{\mathrm{Mn}}_{1\ensuremath{-}x}[\mathrm{Cu}(\mathrm{Zn},\mathrm{Sc}){]}_{x}{\mathrm{O}}_{3}$ $(0lyl~0.3,0l~xl~0.10)$ manganites, in a wide frequency $(100\char21{}4000{\mathrm{cm}}^{\ensuremath{-}1})$ and temperature (80 K\char21{}300 K) range. The reflectivity spectra were analyzed by a fitting procedure based on a model that includes Drude, midinfrared electronic, and phonon oscillator contributions to the dielectric constant. Six infrared active ${(3A}_{u}$ and ${3E}_{u})$ modes of rhombohedral symmetry are clearly observed. We assigned all observed modes according to existing lattice dynamical calculations for the rhombohedral structure of ${\mathrm{LaMnO}}_{3}.$ A decrease of the rhombohedral distortion below the paramagnetic-ferromagnetic transition is manifested through a lowering or complete removal of the frequency difference between the ${A}_{u}$ and ${E}_{u}$ modes.
TL;DR: In this paper, the effects of samarium substitution on structural and dielectric properties are reported and the variation in density has been explained by considering the change of the vacancy concentration, which controls the volume diffusion during densification.
TL;DR: In this article, a well ordered vortex lattice with a relatively low anisotropy of $1.19 was revealed, which is significantly below the upper-critical-field anisotropic values.
Abstract: We have performed scanning tunneling spectroscopy imaging of vortices in ${\mathrm{MgB}}_{2}$ with both the tunneling current and the applied field perpendicular to the crystalline c axis. This revealed a well ordered vortex lattice with a relatively low anisotropy of $1.19\ifmmode\pm\else\textpm\fi{}0.04.$ This is significantly below the upper-critical-field anisotropy, but in good agreement with theoretical predictions for the penetration depth anisotropy, which at low fields is expected to be dominated by the $\ensuremath{\pi}$ band. The value of the anisotropy is smaller than estimated from small-angle neutron-scattering measurement.
TL;DR: In this paper, the authors present the results of a spectroscopic study of state-of-the-art MgB2 single crystals, carried out by using a modified point-contact technique.
Abstract: We present the results of a spectroscopic study of state-of-the-art MgB2 single crystals, carried out by using a modified point-contact technique The use of single crystals allowed us to obtain point contacts with current injection either parallel or perpendicular to the ab-planes The effect of magnetic fields up to 9 T on the conductance spectra of these contacts is here thoroughly studied, for both B parallel and perpendicular to the ab-planes The complete thermal evolution of the upper critical field of the π band is determined for the first time, and quantitative information about the upper critical field of the σ band and its anisotropy is obtained Finally, by exploiting the different effect of a magnetic field applied parallel to the ab-planes on the two band systems, the partial contributions of the σ and π bands to the total conductance are obtained separately Fitting each of them with the standard BTK model yields a great reduction of the uncertainty on Δσ and Δπ, whose complete temperature dependence is obtained with the greatest accuracy
TL;DR: In this article, a single-electron transistor with multiple independent gates was used to study the behavior of the background charge fluctuators and its behavior upon electric potential variations due to geometrically different gates.
Abstract: Background charge fluctuators are studied individually by means of a single-electron transistor with multiple independent gates. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential variations due to geometrically different gates. Pulse height spectra and the hysteresis of charge trapping transitions are discussed as specific signatures of distinct fluctuators. The location of individual traps is determined from the experimental data and based on electrostatic calculations.
TL;DR: In this paper, the magnetic and transport properties of the phase diagram corresponding to the ferromagnetic insulating and charge-ordered antiferromagnetic states were studied at the characteristic points of phase diagram.
Abstract: The magnetic and transport properties of the ${\mathrm{Pr}}_{1\ensuremath{-}x}{\mathrm{Ca}}_{x}{\mathrm{MnO}}_{3}$ system were studied at the characteristic points of the phase diagram corresponding to the ferromagnetic insulating and charge-ordered antiferromagnetic states. The magnetization M and resistivity $\ensuremath{\rho}$ of the ceramic samples with $x=0.2,$ 0.25, 0.27, 0.29, 0.30, and 0.33 were measured at temperatures $T=4--300\mathrm{K}$ and applied magnetic fields H up to 7 T. It was shown that the Curie temperature ${T}_{C}$ exhibits a nonmonotonic change with x. The maximum value of ${T}_{C}$ was achieved at $x=0.25.$ The isotope substitution ${}^{16}{\stackrel{\ensuremath{\rightarrow}}{\mathrm{O}}}^{18}\mathrm{O}$ was performed for the samples with $x=0.2,0.25,$ and 0.30. A pronounced isotope effect in ${T}_{C}$ was found. A noticeable drop in the activation energy ${E}_{a}$ below the Curie temperature and a decrease of resistivity in the magnetic field both in the ferromagnetic insulator phase and in the phase-separated region at $xg0.3$ were observed. Special attention is paid to the possible manifestations of the phase separation in the ferromagnetic insulating state.
TL;DR: In this paper, an algorithm based on DUT S parameters was developed to extract the electrical parameters of the equivalent circuit up to 18 GHz for a large number of resistors of varying geometries and geometry-scaleable curve-fitted equations for the model parameters have been obtained.
Abstract: The lumped-element electrical equivalent circuit of nichrome (NiCr) resistors is important for monolithic microwave integrated circuit (MMIC) design. This paper presents a methodology for the RF parameter extraction of thin-film NiCr resistors fabricated on GaAs substrate. An algorithm based on DUT S parameters has been developed to extract the electrical parameters of the equivalent circuit up to 18 GHz for a large number of resistors of varying geometries and geometry-scaleable curve-fitted equations for the model parameters have been obtained. The computed S parameters, based on the extracted model parameters, agree reasonably well with the measured S parameters. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 409–412, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11233
01 Dec 2003-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a single crystal of sapphire (α-Al2O3) was irradiated at room temperature with 190 MeV Ag ions having Se∼23 keV/nm with fluences varying from 1011 to 1013 ions/cm2.
Abstract: Swift heavy ion irradiation is carried out on sapphire (α-Al2O3) for controlled modification of its optical properties. Single crystals of α-Al2O3 (0 0 0 1) were irradiated at room temperature with 190 MeV Ag ions having Se∼23 keV/nm with fluences varying from 1011 to 1013 ions/cm2. The pristine as well as irradiated sapphires were characterized by photoluminescence, Fourier transform infrared spectra, optical absorption and X-ray diffraction techniques. The intensity of the PL peak observed at 2.1 eV increases with fluence. X-ray diffraction analysis shows that the surface starts getting amorphized after the fluence of 1 × 1012 ions/cm2. Structural disorder and generation of optically active defect centers (color centers) occur after a fluence of 1 × 1012 ions/cm2. At this fluence the defected zones start overlapping due to multiple ion impact giving rise to cumulative optical response of defects.
01 Dec 2003-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this article, a highly resistive nanocrystalline thin film of Li0.25Mg0.5Mn0.1Fe2.15O4, deposited by RF magnetron sputtering technique on Si(1/0/0) substrate, is irradiated with 190 MeV Au14+ ions.
Abstract: A highly resistive nanocrystalline thin film of Li0.25Mg0.5Mn0.1Fe2.15O4, deposited by RF magnetron sputtering technique on Si(1 0 0) substrate, is irradiated with 190 MeV Au14+ ions. To probe the swift heavy ion induced modifications in the electrical properties in the film an in situ measurement of electrical resistance using two-probe method is carried out. We observe the value of resistivity comes down drastically from 1.5 × 108 to 1 × 105 Ω cm after irradiation at the fluence of 1 × 1013 ions/cm2. In XRD spectra after irradiation no previous spinel peaks are observed. No loss in oxygen content with fluence is observed. We have presented the observed phenomenon as an effect of formation of amorphized latent tracks on the basis of thermal spike model.