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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the site selectivity of Er3+, Yb3+, and W6+ cations is analyzed, and their influence on the electrical and light up conversion properties is studied.

25 citations

Journal ArticleDOI
TL;DR: In this paper, the authors compared residual stresses in AlN thin films sputter-deposited in identical conditions on Si (100) (110) and (111) substrates.
Abstract: This paper reports on the comparison of residual stresses in AlN thin films sputter-deposited in identical conditions on Si (100) (110) and (111) substrates. The deposited films are of polycrystalline wurtzite structure with preferred orientation along the (002) direction. AlN film on the Si (111) substrate showed a vertical columnar structure, whereas films on Si (100) and (110) showed tilted columnar structures. Residual stress in the AlN films is estimated by x-ray diffraction (XRD), infra-red absorption method and wafer curvature technique. Films residual stress are found compressive and values are in the range of − 650 (± 50) MPa, − 730 (± 50) MPa and − 300 (± 50) MPa for the AlN films grown on Si (100), (110) and (111) substrates, respectively, with different techniques. The difference in residual stresses can be attributed to the microstructure of the films and mismatch between in plane atomic arrangements of the film and substrates.

25 citations

Journal ArticleDOI
TL;DR: In this paper, low-temperature transport experiments on a $p$-type GaAs quantum dot capacitively coupled to a quantum point contact are presented and the time-averaged and time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunneling rates into and out of the quantum dot.
Abstract: Low-temperature transport experiments on a $p$-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunneling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot, which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.

25 citations

Journal ArticleDOI
TL;DR: In this article, the X-ray reflectivity form the surface of a liquid crystal with terminally polar (cyano substituted) molecules has been studied using a high-resolution triple-axis Xray spectrometer in combination with a synchrotron source.
Abstract: The X-ray reflectivity form the surface of a liquid crystal with terminally polar (cyano substituted) molecules has been studied using a high-resolution triple-axis X-ray spectrometer in combination with a synchrotron source. It is demonstrated that at the surface of the smectic A1 phase a few antiferroelectric double layers develop that can be distinguished from the bulk single layer structure. A model is developed that separates the electron density in a contribution from the molecular form factor, and from the structure factor of the mono- and the bilayers, respectively. With only a few adjustable parameters it accounts for the rather complex observed reflection curve. It shows that (i) the first molecular layer has tails up rather than heads up, (ii) the smectic order parameter of the first mono- and bilayer is saturated, (iii) the antiferroelectric bilayering does decay rather abruptly and not exponentially Etude RX de la surface d'un cristal liquide pres de la transition nematique-smectique A1. Developpement en surface de quelques doubles couches antiferroelectriques qui peuvent etre distinguees de la structure en simples couches du materiau massif

25 citations

Journal ArticleDOI
TL;DR: In this article, the steady state electrical conduction in polystyrene (PS) and of PS doped with acrylic acid (AA) was studied in the temperature range 35-115 °C.

25 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878