Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In this article, the effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics of sol-gel derived CeTi 2 O 6 thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol is discussed.
21 citations
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TL;DR: In this article, the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported.
Abstract: Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried out in molten KOH, and inductively coupled plasma (ICP) was used for dry etching. We show that ICP using dry etching and wet chemical etching using KOH solution under optimal conditions give values of dislocation density comparable to the one obtained from the high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy investigations. Investigated threading dislocation density is in the order of ~109/cm2 using different techniques.
21 citations
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TL;DR: In this paper, the lowest energy peak in the electronic spectra shows a vibrational progression (separation ≈ 800 cm −1 ) due to a totally symmetric vibration.
21 citations
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TL;DR: Differential scanning calorimetry was used to study the interaction of a membrane model with two neuromediators and four antidepressant drugs and a hypothesis based on this localization is put forward concerning the competitive, or otherwise, character of the blocking of uptake of the neuromed iators.
21 citations
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TL;DR: In this article, the authors performed scanning-gate microscopy on a quantum point contact and observed that the conducting channel is shifted in real space when asymmetric gate voltages are applied.
Abstract: We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.
21 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |