Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the shape-dependent electrochemical properties of NiCo2O4 electrodes were investigated and shape-controlled synthesis of nanoflowers on stainless steel substrate in development of high-performance energy storage systems was demonstrated.
19 citations
TL;DR: In this paper, a new mechanism of dislocation climb is proposed, which involves the production of VF centers (self-trapped hole neighboring a cation vacancy) as a result of the absorption of excess H centers.
19 citations
TL;DR: In this paper, the average grain size in the films grown at a fixed bath temperature (T b ) is observed to remain constant with increase in Fe concentration from x = 0.02 to 0.07.
19 citations
01 Jan 1990
TL;DR: In this paper, the problem of the electronic transport properties of boron carbide is generalized to the icosahedral BORON-rich solids, and it is shown that their semiconductor properties can be attributed to the Jahn-Teller effect distorting the IC, reducing its symmetry from Ih to D3d, thus explaining the preferred crystal symmetry R3m.
Abstract: The problem of the electronic transport properties of boron carbide is generalized to the icosahedral boron-rich solids. It is shown that their semiconductor property, which is unique because of the odd electron number of the boron atoms, as well as other common structural and electronic properties can be attributed to the Jahn-Teller effect distorting the icosahedron, reducing its symmetry from Ih to D3d thus explaining the preferred crystal symmetry R3m and leading to a separation of occupied and unoccupied electronic states. The electronic transport properties of boron carbide including several hitherto surprising results are qualitatively interpreted within this band structure model.
19 citations
TL;DR: In this article, the optical absorption behavior of thin films of ZnIn2Se4 formed by a vacuum deposition process was studied and the optical constants (the refractive index n, extinction coefficient k and dielectric constants ϵ′ and ϵ″, are estimated for Zn2S4 thin films as well as the effect of heat treatments in the wavelength range 300-2500 nm.
19 citations
Authors
Showing all 1757 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Alain Dufresne | 111 | 358 | 45904 |
| Yang Ren | 79 | 880 | 26341 |
| Klaus Ensslin | 70 | 638 | 21385 |
| Werner Wegscheider | 69 | 933 | 21984 |
| Takashi Takahashi | 65 | 424 | 14234 |
| Liu Hao Tjeng | 64 | 322 | 13752 |
| Nicholas E. Geacintov | 63 | 453 | 15636 |
| Manfred Sigrist | 61 | 468 | 18362 |
| Thomas Ihn | 61 | 475 | 14159 |
| Takafumi Sato | 59 | 263 | 11032 |
| Christoph Stampfer | 59 | 315 | 14422 |
| Christian Colliex | 58 | 289 | 14618 |
| Takashi Mizokawa | 57 | 400 | 11697 |
| Eberhard Bodenschatz | 57 | 374 | 13208 |
| Bertram Batlogg | 55 | 190 | 9459 |