Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Papers published on a yearly basis
Papers
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TL;DR: The thermoelectric power of Ag 7 I 4 PO 4 superionic conductor has been studied for the first time from 4 to 75°C; 80°C being its decomposition temperature as mentioned in this paper.
18 citations
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TL;DR: In this paper, a patterned back gate compatible with high mobility molecular beam epitaxy via local oxygen ion implantation was proposed to suppress the conductivity of an 80'nm thick silicon doped GaAs epilayer.
Abstract: We present a reliable method to obtain patterned back gates compatible with high mobility molecular beam epitaxy via local oxygen ion implantation that suppresses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique was optimized to circumvent several constraints of other gating and implantation methods. The ion-implanted surface remains atomically flat which allows unperturbed epitaxial overgrowth. We demonstrate the practical application of this gating technique by using magneto-transport spectroscopy on a two-dimensional electron system (2DES) with a mobility exceeding 20 × 106 cm2/V s. The back gate was spatially separated from the Ohmic contacts of the 2DES, thus minimizing the probability for electrical shorts or leakage and permitting simple contacting schemes.
18 citations
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TL;DR: In this paper, the authors demonstrate that sufficiently strong optical excitation may result in the population inversion in graphene, so that the real part of the ac conductivity can be negative in the terahertz range of frequencies.
Abstract: We demonstrate that sufficiently strong optical excitation may result in the population inversion in graphene, so that the real part of the ac conductivity can be negative in the terahertz range of frequencies. We study also how the heating of the electron-hole system influences the effect of negative ac conductivity. The effect of population inversion and negative ac conductivity might be used in graphene-based coherent sources of terahertz electromagnetic radiation. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
18 citations
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TL;DR: A suit of zircon (ZrSiO 4 ) samples has been selected for experiments by thermoluminescence (TL) and by Laser Ablation ICP-MS to study the role of rare earth elements (REE) as discussed by the authors.
18 citations
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TL;DR: In this article, a surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements.
18 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |