Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: X-ray inelastic scattering experiments on Li for k ⪆ 2 k F show that the plasmons persist in the whole particle-hole continuum with a flat dispersion relation and that a second peak appears for k > 2k F which is unexpected as discussed by the authors.
17 citations
TL;DR: In this article, a quantum dot coupled capacitively to a quantum point contact is used as a charge detector, and the transport current through the dot and the time-averaged charge on the dot are measured simultaneously.
Abstract: We present measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transport current through the dot and the time-averaged charge on the dot are measured simultaneously. At finite bias voltage through the dot, the differential charge signal coincides with some of the Coulomb diamond boundaries and with the signatures from excited states in the dot current. Combining the resulting integrated charge data with the simultaneous measurements of the dot current allows us to estimate the coupling of different energy levels inside the dot to both leads individually.
17 citations
TL;DR: In this paper, the authors measured the transport properties of thin chalcopyrite compounds, namely electrical conductivity σ, Hall coefficient R H and thermoelectric power Q, as a function of temperature in the range 80-400 K.
17 citations
TL;DR: In this paper, the electrical resistivities of liquid sodium-potassium and sodium-rubidium alloys have been determined by the Thomson bridge method and qualitatively interpreted on the basis of the Ziman formalism, using structure factors according to Ashcroft and Lekner and pseudopotentials according to Animalu and Heine.
17 citations
TL;DR: In this article, the total emissivity of four samples of silicon of different resistivities was measured in the temperature range 880-1550 K. The actual values of the emissivities vary from about 042 to 078 depending upon the temperature and the resistivity of the sample.
Abstract: The total emissivity of four samples of silicon of different resistivities is measured in the temperature range 880-1550 K. The emissivity depends on carrier concentration in the silicon samples. As the temperature increases the emissivity increases, shows a maximum at about 950 K and then starts decreasing. After showing a broad minimum at about 1200 K, it starts increasing again. The actual values of the emissivity vary from about 042 to 078 depending upon the temperature and the resistivity of the sample.
17 citations
Authors
Showing all 1757 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Alain Dufresne | 111 | 358 | 45904 |
| Yang Ren | 79 | 880 | 26341 |
| Klaus Ensslin | 70 | 638 | 21385 |
| Werner Wegscheider | 69 | 933 | 21984 |
| Takashi Takahashi | 65 | 424 | 14234 |
| Liu Hao Tjeng | 64 | 322 | 13752 |
| Nicholas E. Geacintov | 63 | 453 | 15636 |
| Manfred Sigrist | 61 | 468 | 18362 |
| Thomas Ihn | 61 | 475 | 14159 |
| Takafumi Sato | 59 | 263 | 11032 |
| Christoph Stampfer | 59 | 315 | 14422 |
| Christian Colliex | 58 | 289 | 14618 |
| Takashi Mizokawa | 57 | 400 | 11697 |
| Eberhard Bodenschatz | 57 | 374 | 13208 |
| Bertram Batlogg | 55 | 190 | 9459 |