Solid State Physics Laboratory

About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.

Interference of electrons in backscattering through a quantum point contact

Abstract: Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts, we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al (2000 Science 289 2323). We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus. The branches disappear at magnetic fields as low as 50 mT, demonstrating the importance of backscattering for the observation of the branching effect. The spacing between the interference fringes varies by more than 50% for different branches across scales of microns. Several scenarios are discussed to explain this observation.

X-ray diffraction measurements on liquid iodine and some dilute mixtures of KI in I2

Abstract: Using X-ray diffraction we have determined the structure factor of pure iodine and of a number of dilute mixtures of KI in I2. We show that these liquids exhibit short-range orientational order, adjacent molecules being orient- ed more or less parallel. The intramolecular bond length in pure liquid iodine is 2·70±0·01 A, intermediate between the bond lengths of gaseous and solid iodine. Upon addition of KI the bond length increases, while the distances to atoms in the second and third shell decrease. These effects are related to recent high-pressure diffraction measurements on solid iodine.

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys.

Abstract: The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several distinctly MBE grown GaAs1−xBix alloys. Statistical quantification of atomic-resolution HAADF images, as well as numerical simulations, are employed to interpret the contrast from Bi-containing columns at atomically abrupt (001) GaAs-GaAsBi interface and the onset of CuPt-type ordering. Using monochromated EELS mapping, bulk plasmon energy red-shifts are examined in a sample exhibiting phase-separated domains. This suggests a simple method to investigate local GaAsBi unit-cell volume expansions and to complement standard X-ray-based lattice-strain measurements. Also, a single-variant CuPt-ordered GaAsBi sample grown on an offcut substrate is characterized with atomic scale compositional EDX mappings, and the order parameter is estimated. Finally, a GaAsBi alloy with a vertical Bi composition modulation is synthesized using a low substrate rotation rate. Atomically, resolved EDX and HAADF imaging shows that the usual CuPt-type ordering is further modulated along the [001] growth axis with a period of three lattice constants. These distinct GaAsBi samples exemplify the variety of Bi distributions that can be achieved in this alloy, shedding light on the incorporation mechanisms of Bi atoms and ways to further develop Bi-containing III-V semiconductors.

Excitation of two-dimensional plasmon polaritons by an incident electromagnetic wave at a contact

Abstract: We consider the scattering of an incident electromagnetic radiation on a two-dimensional (2D) electron layer with an imbedded metallic contact. We show that the incident wave excites in the system the 2D plasmon polaritons running along the 2D layer and localized near it, and electromagnetic waves reflected back from the system. The ratio of the energy transformed to the 2D plasmon polaritons and reflected back from the layer depends on the frequency and the value of a retardation parameter, which characterizes the importance of retardation effects. When the retardation parameter is large, the energy of the incident radiation is mainly reflected from the 2D electron system and the excitation of the 2D plasmon polaritons is less effective. The results obtained are discussed in connection with recent experiments on the microwave response of the 2D electron systems.

Independent determination of the two gaps by directional point-contact spectroscopy in MgB2 single crystals

Abstract: Directional point-contact spectroscopy measurements were performed for the first time in state-of-the-art MgB2 single crystals. The selective suppression of the superconductivity in the π band by means of a suitable magnetic field allowed separation of the partial contribution of each band to the total point-contact conductance. By fitting the partial conductance curves σσ(V) and σπ(V), we got an independent determination of the two gaps, Δσ and Δπ, with a strong reduction of the experimental uncertainty. Their temperature dependence was found to agree well with the predictions of the two-band models for MgB2.