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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, it was shown that the reciprocal pitch can be fitted reasonably well to a linear function of the temperature, except in the vicinity of phase transitions, and that the slope of the linear function, i.e. d(p−1/dt, is always positive.
Abstract: In the cholesteric phase of mixtures of cholesteric cholesteryl chloride (CC) with nematic p-ethoxy benzylidene-p-n butylaniline (EBBA) as well as with nematic p-[(p-ethoxy-benzyl-idene)amino]benzonitrile (PEBAB), the pitch has been determined asl a function of temperature and composition. For a CC weight fraction x≲ 0.8 we used the “variable wedge” method for x ≳ 0.8 we determined the wavelength of maximum reflection λo and the average refractive index n and employed the rlation λo = n p. We show that n can vary appreciably as a function of composition in a cholesteric binaryo system. For each composition the reciprocal pitch can be fitted reasonably well to a linear function of the temperature, except in the vicinity of phase transitions. It appears that the slope of the linear function, i.e. d(p−1/dt, is always positive. We dicuss the results in relation to recently developecd expressions for the pitch as a function of temperature and composition.

15 citations

Journal ArticleDOI
TL;DR: In this article, the fine structure of transitions in polyvinylidene fluoride (PVF2) has been investigated by thermally stimulated techniques: Thermostimulated creep (TSCr) and thermostimimulated current (TSCu).
Abstract: Multiple transitions in poly(vinylidene fluoride)-PVF2 - have been studied by thermally stimulated techniques: Thermostimulated creep -TSCr - and thermostimulated current -TSCu -. The resolving power of these methods have allowed us to investigate the fine structure of transitions in PVF2. A relaxation mode is observed around the glass transition temperature -Tg -; it can be described by a distribution of relaxation times following an Arrhenius equation and it has been attributed to microbrownien motions of the amorphous chains. Another relaxation mode is revealed ∼50° higher than Tg. It corresponds to a distribution of relaxation times obeying a Vogel equation and has been assigned to the fluidification of the amorphous chains. In both cases, two sub-modes can be distinguished:The sub-mode observed at lower temperature has been attributed to the amorphous regions free from constraint, while the other one at higher temperature, has been assigned to amorphous chains under constraints from crystall...

15 citations

Journal ArticleDOI
TL;DR: The frequency dependence of the transverse optical mode in the long-wavelength limit on the density of conduction electrons is calculated in this paper, which is a consequence of the dielectric properties of the free electron gas which gives a change of the effective ion-ion interaction.
Abstract: The frequency dependence of the transverse optical mode in the long-wavelength limit on the density of conduction electrons is calculated. This dependence is a consequence of the dielectric properties of the free electron gas which gives a change of the effective ion-ion interaction. By putting the limiting frequency equal to zero one finds an equation for the ferroelectric Curie temperature.

15 citations

Journal ArticleDOI
01 Dec 2008-EPL
TL;DR: In this article, a quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements.
Abstract: A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at Thole = 185 mK The charging energies as large as ∼ 2 meV evaluated from Coulomb diamond measurements together with the well-resolved single-hole excited-state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime Copyright c EPLA, 2008

15 citations

Journal ArticleDOI
TL;DR: In this paper, a misaligned double-gate p-i-n impact ionization MOS (MIMOS) with a deliberate misalignment between the top and bottom gates is proposed.
Abstract: In this paper, we propose a misaligned double-gate p-i-n impact ionization MOS (MIMOS) with a deliberate misalignment between the top and bottom gates. The presence of a misaligned bottom gate leads to band-to-band-tunneling of electrons at the source-intrinsic region interface and increases the number of carriers for impact ionization. The electric field redistribution provides a longer transport path for the carriers. Therefore, carriers gain higher kinetic energy, and the impact ionization rate is enhanced in the MIMOS. This results in a significantly lower avalanche breakdown voltage compared to conventional single-gate IMOS structure. Using calibrated 2-D simulations, we demonstrate that MIMOS exhibits a steep subthreshold slope (~6 mV/dec) at a significantly low-supply voltage of ( ${V}_{\text {DS}}= {0.59}$ V), which is ~48% lower than that of the corresponding single-gate IMOS ( ${V}_{\text {DS}}= {1.15}$ V).

15 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878