Solid State Physics Laboratory

About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.

Transport in a three-terminal graphene quantum dot in the multi-level regime

Abstract: We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances reveal slightly different resonance energies depending on which pair of leads is used for probing. Rapid changes in the tunneling coupling between the leads and the dot due to localized states in the constrictions has been excluded by tuning the difference in resonance energies using in-plane gates which couple preferentially to individual constrictions. The interpretation of the different resonance energies is then based on the presence of a number of levels in the dot with an energy spacing of the order of the measurement temperature. In this multi-level transport regime the three-terminal device offers the opportunity to sense if the individual levels couple with different strengths to the different leads. This in turn gives qualitative insight into the spatial profile of the corresponding quantum dot wave functions.

Thermal conductivity of metals at high temperatures by the Jain and Krishnan method: V. Zirconium

Abstract: Using the modified Jain and Krishnan method, the thermal conductivity of zirconium has been measured in the temperature range 1100-1500 K. The thermal conductivity of zirconium is found to increase with temperature. Also, the electrical resistivity of zirconium and the total emissivity of ZrO have been measured in the temperature range 1050-1500 K and are reported in this paper.

Scanning-gate-induced effects and spatial mapping of a cavity

Abstract: Tailored electrostatic potentials are at the heart of semiconductor nanostructures. We present measurements of size and screening effects of the tip-induced potential in scanning gate microscopy on a two-dimensional electron gas. First, we show methods on how to estimate the size of the tip-induced potential. Second, a ballistic cavity is studied as a function of the bias-voltage of the metallic top gates and probed with the tip-induced potential. It is shown how the potential of the cavity changes by tuning the system to a regime where conductance quantization in the constrictions formed by the tip and the top gates occurs. This conductance quantization leads to a unprecedented rich fringe pattern over the entire structure. Third, the effect of electrostatic screening of the metallic top gates is discussed.