Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In this article, the elastic constants of Schiffs bases were investigated in terms of the theory of Priest and it was shown that the elastic constant is related to the molecular dimensions and can be understood qualitatively in terms the theory.
Abstract: Experimental values are reported for the elastic constants of a number of Schiffs bases. The ratio K3,/Kl, is found to decrease with increasing alkyl chain length. The results indicate that the elastic constants are related to the molecular dimensions and can be understood qualitatively in terms of the theory of Priest.
14 citations
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TL;DR: In this article, the morphological and electrical properties of c-axis oriented aluminium nitride (AlN) thin films grown on Si (100) and Si (110) substrates by direct current (DC) reactive sputtering technique were discussed.
14 citations
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TL;DR: In this paper, it was shown that electrons can localize along the edges on length scales much longer than the physical disorder length, and such states localized along the edge can even leak out of the nanoribbon into adjacent wide graphene leads suggesting that a possibly existing confinement gap is not required to explain transport properties of etched graphene nanodevices.
Abstract: Patterned graphene nanodevices are promising candidates for nano- and quantum-electronics. Low temperature electronic transport in reactive ion etched graphene nanodevices is typically governed by charge localization manifesting itself in the appearance of Coulomb blockade. The disorder originating from non-perfect graphene edges was identified as being the dominant reason for the stochastic charge localization in graphene nanoribbons. It was found that electrons can localize along the edges on length scales much longer than the physical disorder length. Such states localized along the edge can even leak out of the nanoribbon into adjacent wide graphene leads suggesting that a possibly existing confinement gap is not required to explain transport properties of etched graphene nanodevices. These insights are then used to improve the understanding of transport in graphene quantum dots where Coulomb blockade is typically more regular than in nanoribbons. It is shown that non-overlapping Coulomb diamonds can be observed even in a regime where three states of localized charge need to be passed in series by an electron traveling from source to drain contact. This counter-intuitive observation is explained by higher order co-tunneling through the localized states in the nanoribbons connecting the graphene dot to the leads. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
14 citations
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TL;DR: In this paper, it was suggested that the apparent enhancements and the observed law, are a direct result of the use of diffusion penetrations (2√ Dt) too small for the resolution of the various methods of analysis.
14 citations
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TL;DR: In this article, the effect of pre-sintering temperature on the structural and dielectric properties of thin TiO 3 thin films has been studied and it has been found that with an increase in the pre-interference temperature from 400 to 600°C, the dielectoric constant increases from 225 to 383 (measured at 100 kHz); whereas, the loss tangent remains nearly constant at 0.03-0.05.
14 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |