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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: The substrate misorientation effect was dominant at 500 °C with higher V/III ratio, in which case the combined effect of the vicinal surface and the self-catalyzed Ga droplets assisted the realization of self-assembled and crystallographically oriented epitaxial nanowire arrays through the vapor-solid mechanism.
Abstract: We report the self-catalyzed growth of GaAs nanowire arrays by metalorganic vapor phase epitaxy (MOVPE) on GaAs vicinal substrates. The effect of substrate misorientation on the nanowire growth and the influence of growth parameters such as temperature and input V/III ratio have been studied in detail. Variation in the nanowire growth mechanism and consequential changes in the nanowire growth morphology were observed. A VLS growth mechanism with negligible effect of the vicinal surface gave rise to randomly distributed droplet-terminated GaAs nanowires at 400??C and multiprong root-grown GaAs nanowire clusters at 500??C with low V/III ratio. The substrate misorientation effect was dominant at 500??C with higher V/III ratio, in which case the combined effect of the vicinal surface and the self-catalyzed Ga droplets assisted the realization of self-assembled and crystallographically oriented epitaxial nanowire arrays through the vapor?solid mechanism.

14 citations

Journal ArticleDOI
TL;DR: A review of the development and the present state of the art of waveguides for sub-millimeter-wave lasers is presented in this paper, where theoretical and experimental aspects of waveguide for longitudinally and transversely excited as well as for optically pumped lasers are discussed.
Abstract: A review of the development and the present state of the art of waveguides for submillimeter-wave lasers is presented. Theoretical and experimental aspects of waveguides for longitudinally and transversely excited as well as for optically pumped lasers are discussed. This is followed by a comment on investigations of periodic waveguide structures for distributed feeback submillimeter-wave lasers.

14 citations

Journal ArticleDOI
TL;DR: This experimental observation of electron jetting has consequences for carrier transport in two-dimensional materials with a trigonally warped band structure in general, as well as for devices relying on ballistic and valley-selective transport.
Abstract: Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Here, we report on the observation of distinct electronic jets emanating from a narrow split-gate-defined channel in bilayer graphene. We find that these jets, which are visible via their interference patterns, occur predominantly with an angle of 60° between each other. This observation is related to the trigonal warping in the band structure of bilayer graphene, which, in conjunction with electron injection through a constriction, leads to a valley-dependent selection of momenta. This experimental observation of electron jetting has consequences for carrier transport in two-dimensional materials with a trigonally warped band structure in general, as well as for devices relying on ballistic and valley-selective transport.

14 citations

Journal ArticleDOI
TL;DR: In this article, the spin degree of freedom of a ring-shaped many-electron quantum dot was investigated using Coulomb-blockade spectroscopy and the size of the exchange interaction matrix element was determined.
Abstract: Recent experiments that are reviewed explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to magnetic fields normal to the plane of the ring and electric fields caused by suitable gate voltages. This narrows down the choice of ground-state spin sequences. A gate-controlled singlet–triplet transition is identified and the size of the exchange interaction matrix element is determined.

14 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878