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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, two series of Zn-substituted LiMg and LMgTi ferrites were prepared by the solid state reaction method with a view to investigate their elastic behaviour.

13 citations

Journal ArticleDOI
TL;DR: In this paper, a transformation from ferrimagnetic to superparamagnetic behavior is observed from CEMS (conversion electron Mossbauer spectroscopy) with increase in fluence from 2.5×-1012 to 1.3x-1013 ions/cm2.
Abstract: Nanocrystalline Li0.25Mg0.5Mn0.1Fe2.15O4 ferrite thin films, prepared by R.F. magnetron sputtering technique, are irradiated with 190 MeV Au14+ ions. The significant behavioural changes in magnetic and electrical properties of thin films after swift heavy ion irradiation confirm the formation of stable defects. A transformation from ferrimagnetic to superparamagnetic behaviour is observed from CEMS (conversion electron Mossbauer spectroscopy) with increase in fluence from 2.5 × 1012 to 1 × 1013 ions/cm2. The resistivity initially increases after irradiation till the fluence reaches 1 × 1012 ions/cm2 and then reduces with further increase in fluence. We have also studied the X-ray diffraction pattern with fluence variation. A possible explanation of the above results on the basis of thermal spike model is presented. These effects are mainly due to amorphized latent tracks and variation in the cation distribution due to heavy ion irradiation.

13 citations

Journal ArticleDOI
TL;DR: In this article, room temperature magnetoelectric properties of (0−3) particulate composites of non-lead based piezoelectrics BNTKNNLTS [0.97(Bi 0.5 Na 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ] are presented.

13 citations

Journal ArticleDOI
TL;DR: In this paper, Vanadium pentoxide (V2O5) thin films have been deposited by reactive direct current (DC) magnetron sputtering onto glass and Si (100) substrates in identical deposition conditions and investigated for their physical properties.

13 citations

Journal ArticleDOI
TL;DR: In this article, the authors presented the optimization of deep boron diffusion (boron concentration > 5×10 19 ǫ atoms/cm 3 having thickness > 10μm) in silicon (100, (110) and (111) wafers.

13 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878