Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, two series of Zn-substituted LiMg and LMgTi ferrites were prepared by the solid state reaction method with a view to investigate their elastic behaviour.
13 citations
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01 Sep 2004-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a transformation from ferrimagnetic to superparamagnetic behavior is observed from CEMS (conversion electron Mossbauer spectroscopy) with increase in fluence from 2.5×-1012 to 1.3x-1013 ions/cm2.
Abstract: Nanocrystalline Li0.25Mg0.5Mn0.1Fe2.15O4 ferrite thin films, prepared by R.F. magnetron sputtering technique, are irradiated with 190 MeV Au14+ ions. The significant behavioural changes in magnetic and electrical properties of thin films after swift heavy ion irradiation confirm the formation of stable defects. A transformation from ferrimagnetic to superparamagnetic behaviour is observed from CEMS (conversion electron Mossbauer spectroscopy) with increase in fluence from 2.5 × 1012 to 1 × 1013 ions/cm2. The resistivity initially increases after irradiation till the fluence reaches 1 × 1012 ions/cm2 and then reduces with further increase in fluence. We have also studied the X-ray diffraction pattern with fluence variation. A possible explanation of the above results on the basis of thermal spike model is presented. These effects are mainly due to amorphized latent tracks and variation in the cation distribution due to heavy ion irradiation.
13 citations
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TL;DR: In this article, room temperature magnetoelectric properties of (0−3) particulate composites of non-lead based piezoelectrics BNTKNNLTS [0.97(Bi 0.5 Na 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ] are presented.
13 citations
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TL;DR: In this paper, Vanadium pentoxide (V2O5) thin films have been deposited by reactive direct current (DC) magnetron sputtering onto glass and Si (100) substrates in identical deposition conditions and investigated for their physical properties.
13 citations
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TL;DR: In this article, the authors presented the optimization of deep boron diffusion (boron concentration > 5×10 19 ǫ atoms/cm 3 having thickness > 10μm) in silicon (100, (110) and (111) wafers.
13 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |