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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering gallery modes in a two-dimensional electron gas.
Abstract: Scalable architectures for quantum information technologies require one to selectively couple long-distance qubits while suppressing environmental noise and cross talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated, long-distance coupling effectively minimizes undesirable direct cross talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

13 citations

Journal ArticleDOI
TL;DR: In this article, the effect of fully strained AlN nucleation layer (NL) on the AlN/SiC interface and on the subsequent GaN growth was investigated, and the thickness of the NL was varied between 10nm and 100nm in order to study the surface morphology and strain of AlN NL layer.
Abstract: AlN nucleation layers (NL) with different thickness were grown on 4H-SiC substrates using MOVPE. The growth evolution of the AlN layer on SiC was investigated. The effect of fully strained AlN nucleation layer (NL) on the AlN/SiC interface and on the subsequent GaN growth was also investigated. The thickness of the NL was varied between 10 nm and 100 nm in order to study the surface morphology and strain of AlN NL layer. The interface quality between AlN and SiC was characterized using HRXRD. It was observed that 100 nm NL was partially relaxed whereas 40 nm AlN NL was fully strained with improved SiC/AlN interface. GaN layer grown with fully strained NL showed improved surface morphology and lower screw dislocation density. 2DEG properties of AlGaN/GaN HEMT structures grown on fully strained and partially relaxed NL were found to be almost similar.

13 citations

Journal ArticleDOI
TL;DR: In this article, a model for both electron excess and hole excess centres is proposed and theoretical calculations of some of the hole-excess centres have been carried out, and it turns out that the colour centres produced at temperatures higher than 77°K can be associated with oxygen impurities.
Abstract: Optical absorption measurements in combination with an EPR investigation of colour centres produced by X-rays in synthetic chlorapatite single crystals are presented. Models for both electron-excess and hole-excess centres are proposed and theoretical calculations of some of the hole-excess centres have been carried out. It turns out that the colour centres produced at temperatures higher than 77°K can be associated with oxygen impurities. Subtractive coloration at 5°K gives rise to the formation of F-centres. Es wurden durch Rontgenstrahlen erzeugte Farbzentren in synthetischen Einkristallen von Chlorapatit mittels kombinierter optischer Absorptionsmessungen und EPR untersucht. Sowohl fur Elektronenuberschuszentren wie fur Locheruberschuszentren werden Modelle aufgestellt und fur den zweiten Fall durchgerechnet. Es stellt sich heraus, das die bei Temperaturen uber 77°K erzeugten Farbzentren mit Sauerstoffstorstellen zusammenhangen. Subtraktive Farbung bei 5°K gibt Anlas zur Bildung von F-Zentren.

13 citations

Journal ArticleDOI
TL;DR: Combining photons with electronic excitations creates a new kind of quasiparticle that can be manipulated with electric or magnetic fields as mentioned in this paper, which can be used to create a new type of quasi-particle.
Abstract: Combining photons with electronic excitations creates a new kind of quasiparticle that can be manipulated with electric or magnetic fields.

13 citations

Journal ArticleDOI
TL;DR: The pyroelectric properties of bioriented β-PVDF were studied in the temperature range [- 100-70°C] and its variation was compared with the DSC thermogram and the TSC complex spectrum.
Abstract: The pyroelectric properties of bioriented β-PVDF were studied in the temperature range [- 100-70°C]. The temperature dependence of the pyroelectric coefficient was obtained, and its variation was compared with the DSC thermogram and the TSC complex spectrum. Three transitions have been observed in the investigated temperature range. They have been associated with the glass transition of the free and constrained amorphous phases (Tgl = -40°C and Tgu = 15°C) and to conformational reorganizations at the crystallites surface (Tac = 47°C). A correlation has been established between these pyroelectric transitions and volumetric variations. Dimensional effects have been found to reasonably describe the increase of the pyroelectric coefficient through the glass transition range. These changes in the thickness of the film correspond to secondary pyroelectricity and explain nearly 50% of the room temperature coefficient. In the glassy state, primary pyroelectricity is dominant.

13 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878