Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the magnetic properties of c- and m-plane GaN/Al2O3 templates were investigated for growth of nitrides on different substrate materials, and the hysteresis loops of the GaN films were shown to have intrinsic ferromagnetic properties.
Abstract: We report the magnetic properties of c- and m-plane GaN : Gd films grown on different substrate materials. Additionally, we have investigated the magnetic behaviour of the bare substrates in order to analyse their possible contribution on the properties of this material system. For the growth of c-phase GaN : Gd we have used 6H–SiC(0 0 0 1) and GaN/Al2O3 templates. Whereas templates only exhibit a diamagnetic behaviour, the SiC substrates show clear signatures of ferromagnetism at room temperature. Rutherford backscattering spectroscopy and secondary ions mass spectrometry have revealed traces of Fe in the SiC substrates. This Fe contamination seems to be related to the ferromagnetic ordering observed in these substrates. LiAlO2(0 0 1) is a good choice for growth of m-plane diluted nitrides due to its diamagnetic behaviour. The hysteresis loops of c- and m-phase GaN : Gd deposited on template and LiAlO2, respectively, show coercivity and magnetic saturation. These characteristics together with the magnetization curves are indications of an intrinsic ferromagnetic behaviour in the GaN : Gd.
13 citations
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TL;DR: The role of chemistry in the development of photoresists is described in this article, which exploits changes in properties of polymeric materials, such as their solubility or volatility, upon photo-irradiation.
Abstract: Photoresist technology, which is used for micro-patterning exploits changes in properties of polymeric materials, such as their solubility or volatility, upon photo-irradiation. This process has greatly benefitted from the knowledge base of organic chemistry and photo-induced organic transformations. The role of chemistry in the development of photoresists is described in this article.
13 citations
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TL;DR: In this article, the authors measured the magneto-conductance of a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime and interpreted the resulting conductance pattern in terms of a phase diagram of stable charge in the two compressible regions.
Abstract: We measure the magneto-conductance through a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime. In the Coulomb blockade, when the island is weakly coupled to source and drain contacts, edge reconstruction at filling factors between one and two in the dot leads to the formation of two compressible regions tunnel coupled via an incompressible region of filling factor $
u=1$. We interpret the resulting conductance pattern in terms of a phase diagram of stable charge in the two compressible regions. Increasing the coupling of the dot to source and drain, we realize a Fabry-P\'{e}rot quantum Hall interferometer, which shows an interference pattern strikingly similar to the phase diagram in the Coulomb blockade regime. We interpret this experimental finding using an empirical model adapted from the Coulomb blockaded to the interferometer case. The model allows us to relate the observed abrupt jumps of the Fabry-P\'{e}rot interferometer phase to a change in the number of bulk quasiparticles. This opens up an avenue for the investigation of phase shifts due to (fractional) charge redistributions in future experiments on similar devices.
13 citations
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TL;DR: A simplified quasi-three-dimensional model for nonequilibrium electron transport in quantum dot infrared photodetectors (QDIPs) based on an ensemble Monte Carlo particle method is proposed and the electric-field and space-charge distributions are calculated.
13 citations
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TL;DR: Theoretical expressions for both the forward current-induced voltage decay (FCVD) and the photovoltage decay (PVD) in a base-dominated back-surface field (BSF) solar cell of arbitrary thickness were derived in this article.
13 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |