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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, room temperature X-ray diffraction study reveals the formation of perovskite phase with tetragonal structure and dielectric measurements have been carried out at different frequencies as a function of temperature (RT to 235°C).

71 citations

Journal ArticleDOI
TL;DR: In this paper, an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer was fabricated.
Abstract: We have fabricated an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm2/Vs at a density of 7 × 1012 cm−2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

71 citations

Journal ArticleDOI
TL;DR: A remarkably clear level scheme for the two- particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom.
Abstract: We report ground- and excited-state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different from quantum dots in carbon nanotubes, where the two-particle ground state is a spin-singlet state. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35 meV and measure a valley and spin g factor of 36 and 2, respectively.

70 citations

Journal ArticleDOI
TL;DR: In this article, the authors developed a device model for a high-electron-mobility transistor (HEMT) affected by the incoming terahertz radiation, which takes into account the electron plasma oscillations in the HEMT channel, tunnelling of electrons from the channel into the gate layer and electron transit time effects in this layer.
Abstract: We develop a device model for a high-electron-mobility transistor (HEMT) affected by the incoming terahertz radiation. The model takes into account the electron plasma oscillations in the HEMT channel, tunnelling of electrons from the channel into the gate layer and electron transit-time effects in this layer. It is shown that the excitation of plasma oscillations accompanied by the delay in the electron propagation across the gate layer and a strong nonlinearity of the tunnelling current can result in significant features of the HEMT high-frequency linear and nonlinear characteristics. We derive a formula for the HEMT gate-to-source/drain admittance. We also calculate the variation of the dc current induced by the terahertz radiation and the HEMT detection responsivity. It is found that the detection responsivity exhibits sharp resonant peaks corresponding to the frequencies of plasma oscillations. The resonant plasma frequencies and the positions of the admittance and detection responsivity peaks depend on the gate length and the lengths of the contact regions (source-to-gate and gate-to-drain spacings) and can be tuned by the gate voltage. The coincidence of the plasma and transit-time resonances can lead to a marked sharpening of the responsivity peaks.

70 citations

Journal ArticleDOI
TL;DR: In this article, the Coulomb and charge transfer energies in oxide layers deposited on a highly polarizable medium like a metal, are reduced from their bulk values, by as much as 1.8 eV and 2.5 eV, respectively.
Abstract: Using the MgO/Ag(100) interface as a model system, we demonstrate that Coulomb and charge-transfer energies in oxide layers deposited on a highly polarizable medium like a metal, are reduced from their bulk values, by as much as 1.8 eV and 2.5 eV, respectively. The use of efficient image potential screening may provide a new method to alter various transition temperatures and properties of correlated oxides.

69 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878