Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed in this paper, and no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov-de Haas oscillations up to filling factors of 200.
Abstract: We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photo conductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov- de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data.
69 citations
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TL;DR: In this paper, the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates were investigated, and the side gating in the absence of a magnetic field was modeled by considering two parallel conducting channels within the Hall bar.
Abstract: We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.
68 citations
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TL;DR: In this paper, the authors investigated the temperature and field dependence of the anisotropy of BN and MgB2 with a high pressure cubic anvil technique and found that the upper critical field anisotropic γ = H//abc2/H//cc2 is temperature dependent (decreasing from γ 6 at 15 K to 2.8 at 35 K).
Abstract: Single crystals of MgB2 with a size up to 1.5 × 0.9 × 0.2 mm3 have been grown with a high pressure cubic anvil technique. The crystal growth process is very peculiar and involves an intermediate nitride, namely MgNB9. Single crystals of BN and MgB2 grow simultaneously by a peritectic decomposition of MgNB9. Magnetic measurements with SQUID magnetometry in fields of 1–5 Oe show sharp transitions to the superconducting state at 37–38.6 K with a width of ~0.5 K. The high quality of the crystals allowed the accurate determination of magnetic, transport (electric and heat) and optical properties as well as scanning tunnelling spectroscopy (STS) and decoration studies. Investigations of crystals with torque magnetometry show that H//cc2 for high quality crystals is very low (24 kOe at 15 K) and saturates with decreasing temperature, while H//abc2 increases up to 140 kOe at 15 K. The upper critical field anisotropy γ = H//abc2/H//cc2 was found to be temperature dependent (decreasing from γ 6 at 15 K to 2.8 at 35 K). The effective anisotropy γeff, as calculated from reversible torque data near Tc, is field dependent (increasing roughly linearly from γeff 2 in zero field to 3.7 in 10 kOe). The temperature and field dependence of the anisotropy can be related to the double gap structure of MgB2 with a large two-dimensional gap and small three-dimensional gap, the latter of which is rapidly suppressed in a magnetic field. Torque magnetometry investigations also show a pronounced peak effect, which indicates an order–disorder phase transition of vortex matter. Decoration experiments and STS visualize a hexagonal vortex lattice. STS spectra in zero field evidence two gaps 3 meV and 6 meV with a weight depending on the tunnelling direction. Magneto-optic investigations in the far-infrared region with H//c show a clear signature of the smaller of the two superconducting gaps, completely disappearing only in fields higher than H//cc2.
67 citations
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TL;DR: In this paper, thin films of bismuth telluride have been prepared by the reactive evaporation method and their properties such as conductivity, Hall effect, and thermoelectric power were studied in the temperature range from liquid nitrogen to 350 K. The films were of n-type with a carrier concentration of 1.25 x 10 20 at room temperature.
67 citations
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TL;DR: In this paper, infrared reflectance spectra of twenty different glasses of the type (B2O3)1-x-y(Li2O)x(Cs 2O)y have been measured in the frequency range of 10-5000 cm−1.
Abstract: Infrared reflectance spectra of twenty different glasses of the type (B2O3)1-x-y(Li2O)x(Cs2O)y have been measured in the frequency range of 10–5000 cm−1. From these spectra, infrared absorbance and dielectric spectra have been calculated using the Kramers-Kronig inversion technique. The mid-infrared parts of the spectra are discussed in connection with BO network vibrational modes. The far-infrared parts of the spectra yield cation vibrational modes, which distinctly depend on the glass composition. The occurrence of two absorbtion bands for each cation species is associated with single and double occupation of network sites. It appears that the Li+ ionic vibrations are a sensitive function of the local network structure, but that the Cs+ ionic vibrations depend only on the total charge provided by a larger part of the surrounding glass network. In the binary lithium-containing glasses, a dielectric relaxation at ≈ 60 cm−1 arises. This relaxation is assigned to an ‘unsuccessful hop’ mode. The far-infrared dielectric results can be connected smoothly to dielectric spectra in the GHz region.
66 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |