scispace - formally typeset
Search or ask a question
Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: By applying a bias between the two strongly coupled leads, the Kondo effect is measured directly and this work demonstrates directly the out-of-equilibrium Kondo DOS.
Abstract: We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration nonlinear transport measurements allow us to check which lead contributes to the Kondo density of states (DOS) and which does not. The ring geometry allows a fine-tuning of the coupling to each lead through the Aharonov-Bohm effect via application of a magnetic field. When the ring is connected to two strongly and one weakly coupled leads, conductance through the weakly coupled lead provides a direct measurement of the DOS in the Kondo regime. By applying a bias between the two strongly coupled leads, we demonstrate directly the splitting of the out-of-equilibrium Kondo DOS.

59 citations

Journal ArticleDOI
TL;DR: In this article, a thermodynamic calculation is presented which explains the origin of often reported large stress fields in and around Te precipitates and associated punching of dislocation loops in star like patterns.
Abstract: A thermodynamic calculation is presented which explains the origin of often reported large stress fields in and around Te precipitates and associated punching of dislocation loops in star like patterns. The calculation is based on the consideration that the stoichiometric deviation in Te saturated crystals are accommodated by Te interstitials, Cd multivacancy complexes and Te antisites; the Te interstitials are most mobile of them, and dominate the precipitation process; and the precipitates when they appear first are in droplet form. The droplet state is modelled on the basis of the Lennard-Jones 6-12 interaction potential. The droplet growth is envisaged to occur via the following two processes operating in tandem: first, capture of excess Te interstitials to cause droplet overpressurization, and then, punching of interstitial dislocation loops whenever the pressure exceeds a threshold value. The flow of Te interstitials into the droplets is driven by the difference between their formation energies in the lattice and the free energy change of the droplets per Te atom added. It is shown that the achievable droplet pressures far exceed that required for the loop punching and sustaining the growth cycle. The occurrence of varying precipitate morphologies are explained, and the possibility of nucleating high presssure Te phases is examined. Some experimental evidence is also presented which corroborate the theoretical arguments involved.

59 citations

Journal ArticleDOI
TL;DR: In this article, the amplitude and the period of the Aharonov-Bohm effect over a magnetic field range of ±5 T were investigated for a single-layer graphene ring.
Abstract: We experimentally investigate the conductance of a single-layer graphene ring. The Aharonov-Bohm oscillation amplitude of the four-terminal resistance is very high with a visibility up to 10%. Additionally, we investigate the amplitude and the period of the Aharonov-Bohm effect over a magnetic field range of ±5 T. We find that, while the period remains constant, the amplitude rises by a factor of 2.

58 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of benzil and cobalt stearate on the degradation behavior of LDPE films was investigated, and the results showed that benzil was not capable of initiating thermal or photo-degradation of films.

58 citations

Journal ArticleDOI
TL;DR: In this paper, a real-time detection of electron tunneling in a graphene quantum dot is presented, and the role of localized states in the tunneling process is investigated. But the authors focus on the single-electron charging events on the dot.
Abstract: We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single-electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a nonmonotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above ${V}_{b}=2$ mV results in an increase of the dot-lead transition rate related to back action of the charge detector current on the dot.

58 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
Network Information
Related Institutions (5)
National Institute for Materials Science
29.2K papers, 880.9K citations

86% related

Indian Institute of Technology Madras
36.4K papers, 590.4K citations

84% related

Forschungszentrum Jülich
35.6K papers, 994.1K citations

84% related

Indian Institutes of Technology
40.1K papers, 652.9K citations

83% related

Tata Institute of Fundamental Research
21.7K papers, 622.3K citations

83% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878