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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a quantum ring is tunnel-coupled to a quantum dot, and the symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of the ring and on the strength of ring-dot coupling.
Abstract: Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the ring, when the electron number in the dot changes by 1. The symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of the ring and on the strength of the ring-dot coupling. At temperatures above T=0.65 K the Fano effect disappears, while the Aharonov-Bohm interference in the ring persists up to T=4.2 K. Good agreement is found between these experimental observations and a single-channel scattering matrix model including decoherence in the dot.

50 citations

Journal ArticleDOI
01 Apr 2015-Carbon
TL;DR: In this paper, large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gramnegative bacteria Escherichia coli were assessed.

50 citations

Journal ArticleDOI
TL;DR: In this article, a stochastic growth model for dielectric breakdown in solid insulators is proposed, and the authors show that quenched disorder does not appreciably modify the patterns which appear in the gaseous case.
Abstract: We show how the stochastic growth model we have formulated for dielectric breakdown is related to microscopic mechanisms. Beginning with gas discharges we focus on the origin of the stochastic features and the dependence of growth probability on the local electric field. For dielectric breakdown in solid insulators we argue that quenched disorder does not appreciably modify the patterns which appear in the gaseous case.

50 citations

Journal ArticleDOI
TL;DR: In this paper, the effects of Li substitution on the structural, dielectric, and ferroelectric properties of the lead-free ceramic system (K 05− x Li x Na 05 )(Nb 09 Ta 01 )O 3 (KNN) with x ǫ= 0, 0015, 0045, and 0060 have been synthesized by conventional solid state reaction followed by high-energy ball milling The average particle size of all the milled powders as determined from the TEM analysis was about 35nm These powders were sintered at 1050

50 citations

Journal ArticleDOI
TL;DR: In this article, a polycrystalline sample of Zr-doped barium titanate (BaTiO3) was prepared by conventional solid state reaction method by XRD and SEM, and electrical properties (dielectric, ferroelectric and impedance spectroscopy) were measured in wide range of frequency and temperature.
Abstract: A polycrystalline sample of Zr-doped barium titanate (BaTiO3) was prepared by conventional solid state reaction method. The effect of Zr (0·15) on the structural and microstructural properties of BaTiO3 was investigated by XRD and SEM. The electrical properties (dielectric, ferroelectric and impedance spectroscopy) were measured in wide range of frequency and temperature. With substitutions of Zr, the structure of BaTiO3 changes from tetragonal to rhombohedral. Lattice parameters were found to increase with substitution. The room temperature dielectric constant increases from ∼ 1675 to ∼ 10586 and peak dielectric constant value increases from ∼ 13626 to ∼ 21023 with diffuse phase transition. Impedance spectroscopy reveals the formation of grain and grain boundary in the material and found to decrease with increase in temperature.

50 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878