Solid State Physics Laboratory

About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.

Counting statistics of single electron transport in a quantum dot

Abstract: We present measurements of counting statistics for electron transport in a quantum dot. By counting the electrons one by one using a quantum point contact as a charge detector, we are able to generate the distribution function of the current fluctuations. From the distribution function, higher order noise correlations can be determined. We measure a reduction of both the second moment (variance, related to shot noise) and the third moment (asymmetry) of the current distribution compared to a Poisson distribution. The reduction of noise can be explained by the increase in electron correlation due to Coulomb blockade.

Thermionic and tunneling transport mechanisms in graphene field‐effect transistors

Abstract: We present an analytical device model for a graphene field-effect transistor (GFET) on a highly conducting substrate, playing the role of the back gate, with relatively short top gate which controls the source–drain current The equations of the GFET device model include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulae for the spatial distributions of the electric potential along the channel and for the voltage dependences of the thermionic and tunneling currents. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A Line Tunneling Field-Effect Transistor Based on Misaligned Core–Shell Gate Architecture in Emerging Nanotube FETs

Abstract: In this paper, a new architecture based on an intentional misalignment between the core and shell gate is presented for the nanotube tunnel field-effect transistor (NT-TFET). The misaligned core gate overlaps with the source region and facilitates line tunneling in the core-gate–source overlapped region significantly increasing the band-to-band tunneling (BTBT) rate. Using the calibrated 3-D simulations, we show that the proposed misaligned (MG) NT-TFET outperforms the conventional NT-TFET both in terms of static as well as dynamic performance. The MGNT-TFET exhibits an increased ON-state current by nearly 11 times as compared to the conventional NT-TFET with an ultrasteep subthreshold slope (minimum point subthreshold swing of ~5 mV/dec and an average subthreshold slope of 15.5 mV/dec). The higher effective drive current also leads to an improved dynamic performance in the MGNT-TFET

Study of a pulsed laser deposited vanadium oxide based microbolometer array

Abstract: A 2D 10-element test microbolometer array was fabricated without an air-gap thermal isolation structure. The microbolometer uses vanadium oxide film deposited by pulsed laser deposition at room temperature as the infrared (IR) sensitive layer. The IR response of the uncooled microbolometer was evaluated in the spectral region of 8–15 μm. The detectivity and the responsivity were determined as ~ 6 × 105 cm Hz1/2 W−1 and 36 V W−1 respectively at a 10 Hz chopper frequency with 50 μA bias current for a thermal conductance G ~ 10−3 W K−1 between the thermal sensing layer and the substrate. The preliminary results for the test microbolometer array are discussed and compared with those for microbolometers fabricated on micromachined thermally isolated structures.