Sony Broadcast & Professional Research Laboratories

About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 38708 authors who have published 63864 publications receiving 865637 citations.

Combined digital audio/video on demand and broadcast distribution system

Abstract: An in-flight passenger entertainment system has a first digital network for communication among components of a headend system including a data server, media controller, one or more media servers, system interface unit, system manager unit and attendant control panel. The in-flight entertainment system is coupled to an aircraft's existing systems through the system interface unit and the system manager unit. The components of the headend system are all coupled to a network switch for routing data within the first network. The network switch is also coupled to one or more zone bridge units, each of which is coupled to multiple seat electronics units. The zone bridge units and the seat electronics units together form a second digital network. The first digital network is preferably an ATM network with fibre optic cables used to carry the data. The second digital network is preferably an IEEE 1394 serial bus network. The zone bridge units control all communications between the networks, converting all communications into the format required by the respective network. A first audio path for transmitting audio content from the headend system is routed to predetermined seat entertainment units through the network switch and the zone bridge units. A second audio path for transmitting audio from the system interface unit is routed to the seat entertainment units through the zone bridge units.

Thin film transistor and display device

Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

A method and apparatus for interactive source language expression recognition and alternative hypothesis presentation and selection

Abstract: In a language translation system, a method for providing a guide for a user. In one embodiment, the method comprises the steps of receiving (302) an input that is representative of at least one word in a source language, and generating (1402) at least one recognition hypothesis in the source language in response to the input. The method further comprises the steps of selecting (406) a best hypothesis from the at least one recognition hypothesis in the source language, presenting (408) the best hypothesis in the source language to a user, and presenting (408) alternatives to a portion of the best hypothesis in the source language to the user. The method further includes receiving (410) an indication of a choice of one of the alternatives from the user, and presenting (306) a revised version of the best hypothesis including the alternative chosen to the user.

Semiconductor memory device

Abstract: A semiconductor memory device comprising; (A) a transistor, (B) a capacitor member formed above said transistor through an insulating interlayer, said capacitor member comprising a lower electrode, a capacitor layer formed of a high-dielectric-constant material or a ferroelectric material and an upper electrode, (C) a contact plug formed in said insulating interlayer, for electrically connecting the lower electrode formed on the insulating interlayer with the transistor, and (D) a diffusion barrier layer formed between the lower electrode and the contact plug, said semiconductor memory device further comprising (E) an adhesion layer formed at least between the lower electrode and the diffusion barrier layer, and said adhesion layer consisting of an alloy that contains a noble metal element as a main component, and contains, as a component, a metal element that differs from any one of the noble metal element, an alkali element and an alkaline earth metal element and that contains no oxygen atom.

Audio video apparatus with intelligence for learning a history of user control

Abstract: A television receiver can output advice information to the viewer when the viewer risks missing a favorite broadcasting program. This television receiver includes in its control unit a timer for obtaining day and time data, a calculating circuit for compiling broadcasting station number currently being viewed by using the time information as parameters, and a weekly tuning information storage unit for storing therein data representing a personal weekly viewing trend on the basis of the compiled result, in which, when it is determined that present tuning data read out from the weekly tuning information storage unit and the present tuning broadcasting station are not coincident with each other, advice information is supplied to the viewer in the form of displayed message or sound message before or after that time.