Sony Broadcast & Professional Research Laboratories

About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Image processing. The organization has 38708 authors who have published 63864 publications receiving 865637 citations.

Method for fabricating thin film transistor device

Abstract: A method for crystallizing a portion of a semiconductor thin film while forming a semiconductor device comprises providing a transparent substrate supporting a metallic gate electrode and an amorphous semiconductor thin film which are separated from each other by a gate insulating film, heating the gate electrode by subjecting it to light rays, and applying a laser beam to the amorphous semiconductor thin film so that the portion of the semiconductor thin film adjacent the metallic gate electrode is heated by both the laser beam and the heat of the gate electrode to cause a crystallization of a portion of the amorphous thin film and then processing the remaining amorphous portions of the thin film to form the transistor structure.

A small biped entertainment robot

Abstract: We propose a small biped entertainment robot, SDR-3X (a prototype Sony Dream Robot) which enables the motion entertainment, i.e., entertaining people with its controlled dynamic motion performances. Some of the new key technologies have been developed to realize the SDR-3X. One is the newly developed robot actuator named intelligent servo actuator (ISA). The ISA is the trine-actuator composed of a motor unit, a built-in control unit and a gear unit. The ISA features dynamic and high power output from a small, lightweight actuator. Another technology is the whole body coordinated dynamic motion control method. It realizes stable biped walking and stable whole-body dynamic motion performances.

Data driven interaction for networked control of a DDI target device over a home entertainment network

Abstract: A method and system for providing a user interface for a networked target device within a home audio/visual network The DDI allows any DDI target to describe its physical appearance including controls and displays, etc, to a DDI controller The controller can be a remote physical device or can be a software program resident on the same or separate device as the target The controller interfaces with the target to obtain the DDI data and generates a user interface for the target including: 1) interactive controls; and 2) user display information pertinent to the target The DDI allows the controller to trigger actions on the target as if a user had physically manipulated the controls of the target The controller and the target are connected to the same communication network A particular embodiment operates within the HAVi architecture The controller communicates with the user by using the input and output devices of (typically) the device upon which the controller is executing This communication can be done in a controller-implementation-dependent manner The target can be a DCM that controls its device in a implementation-dependent manner The controller may be written in a generic manner that does not need to be implemented with knowledge of a particular target in mind; all target-dependencies are represented in the DDI data provided by the target to the controller

Nonvolatile semiconductor memory device and method of operation thereof

Abstract: A MONOS type memory transistor increased in injection efficiency or storing a plurality of bits of data by local injection of a charge into part of a plane area of distribution of a charge storing means, comprised of a channel forming region of a first conductivity type, source and drain regions of a second conductivity type, gate insulating films formed on the channel forming region, gate electrodes, and a charge storing means (charge traps) formed in the gate insulating film and dispersed in a plane facing the channel forming region and the thickness direction and in which hot electrons caused by a band-to-band tunneling current are injected from the source and drain regions, where in the gate insulating film, between a first storage region and a second storage region into which electrons are locally injected, there is a third region into which hot electrons are not injected.