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Institution

Sony Broadcast & Professional Research Laboratories

CompanyTaipei, Taiwan
About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Image processing. The organization has 38708 authors who have published 63864 publications receiving 865637 citations.


Papers
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Patent
08 Mar 2013
TL;DR: In this paper, the authors provided a detecting apparatus including one or a plurality of magnetic coupling elements that include a number of coils, and a detector that measures an electrical parameter related to the one or plurality of coupling elements or to a circuit that at least includes the one and plurality of the coupling elements, and determined from a change in the electrical parameter whether a foreign matter that generates heat due to magnetic flux is present.
Abstract: There is provided a detecting apparatus including one or a plurality of magnetic coupling elements that include a plurality of coils, and a detector that measures an electrical parameter related to the one or plurality of magnetic coupling elements or to a circuit that at least includes the one or plurality of magnetic coupling elements, and determines from a change in the electrical parameter whether a foreign matter that generates heat due to magnetic flux is present. In the one or plurality of magnetic coupling elements, the plurality of coils are electrically connected such that magnetic flux produced from at least one or more of the plurality of coils and magnetic flux produced from remaining coils of the plurality of coils have approximately opposing orientations.

102 citations

Posted Content
TL;DR: DeepBach as mentioned in this paper is a graphical model aimed at modeling polyphonic music and specifically hymn-like pieces, which is trained on the chorale harmonizations by Johann Sebastian Bach and can generate highly convincing chorales in the style of Bach.
Abstract: This paper introduces DeepBach, a graphical model aimed at modeling polyphonic music and specifically hymn-like pieces. We claim that, after being trained on the chorale harmonizations by Johann Sebastian Bach, our model is capable of generating highly convincing chorales in the style of Bach. DeepBach's strength comes from the use of pseudo-Gibbs sampling coupled with an adapted representation of musical data. This is in contrast with many automatic music composition approaches which tend to compose music sequentially. Our model is also steerable in the sense that a user can constrain the generation by imposing positional constraints such as notes, rhythms or cadences in the generated score. We also provide a plugin on top of the MuseScore music editor making the interaction with DeepBach easy to use.

102 citations

Patent
12 Dec 1996
TL;DR: An LDD structure of a thin-film transistor for pixel switching is realized on a large glass substrate by low-temperature processes as discussed by the authors, where a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurate layer (7).
Abstract: An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).

102 citations

Patent
31 Aug 1998
TL;DR: In this article, a nonvolatile semiconductor memory device and writing method of the same having a planarly dispersed charge storing means, which improve the programming disturbance characteristic, is presented.
Abstract: A nonvolatile semiconductor memory device and writing method of the same having a planarly dispersed charge storing means, which improve the programming disturbance characteristic, wherein gate electrodes of a plurality of memory elements are connected to a plurality of word lines, source regions or drain regions are connected with a common line (for example, a bit line or a source line) which crosses the word lines in an electrically insulated state, and the memory device includes a write inhibit voltage supplying means for supplying a source region and/or drain region of a memory element connected to the selected word line with a reverse bias voltage placing the source/drain region in a reverse bias state to the channel forming region via the common line and a non-selected word line biasing means for supplying a non-selected word line with a voltage in the polarity placing the non-selected word, line in a reverse bias state to the channel forming region.

102 citations

Journal ArticleDOI
TL;DR: In this paper, an organic thin-film-transistor (OTFT)-driven active-matrix twisted-nematic liquid crystal display (AM-TN-LCD) was demonstrated on a glass substrate, with a resolution of 160spl times/120 pixels, 79 ppi.
Abstract: We have demonstrated an organic thin-film-transistor (OTFT)-driven active-matrix twisted-nematic liquid crystal display (AM-TN-LCD) on a glass substrate, with a resolution of 160/spl times/120 pixels, 79 ppi. Substrate temperature was kept below the plastic-compatible temperature of 180/spl deg/C throughout the fabrication process. In order to realize an OTFT-driven display with fine resolution, we employed short-channel bottom-contact (BC) pentacene OTFTs. It has been known that their drivability is limited by contact resistance at source/drain (S/D). We found that the S/D contact resistance was markedly reduced when the thickness of the nonohmic Ti adhesion layer for ohmic Au S/D electrodes was reduced less than /spl sim/3 nm. We elucidate that this 3 nm corresponds to the thickness of the accumulating layer in a pentacene channel. When we use a self-assembled monolayer of mercapto-silane-coupling agent as the adhesion layer, the contact resistance becomes negligibly small and BC OTFTs scalable below 10 /spl mu/m were obtained. In addition to this OTFT-cell technology, we developed a low-damage pentacene patterning technique for integration of OTFTs and introduced low-temperature panel assembly process to suppress thermal-stress degradation of pentacene OTFTs, which are the key technologies to achieve OTFT-driven AM-TN-LCD.

101 citations


Authors

Showing all 38711 results

NameH-indexPapersCitations
Hui Li1352982105903
Susumu Kitagawa12580969594
Shree K. Nayar11338445139
Takashi Kobayashi10360651385
Bo Huang9772840135
Muhammad Imran94305351728
Xiaodong Xu94112250817
Mitsuo Kawato8642235640
Takashi Yamamoto84140135169
Atsuo Yamada7844423989
Katsushi Ikeuchi7863620622
Yoshihiro Iwasa7745427146
Satoshi Miyazaki7634120483
Hiroshi Yamazaki7495327216
Alexei Gruverman6930118610
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20223
2021294
2020902
20191,297
20181,111
20171,078