Sony Broadcast & Professional Research Laboratories

About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Image processing. The organization has 38708 authors who have published 63864 publications receiving 865637 citations.

DeepBach: a steerable model for bach chorales generation

Abstract: This paper introduces DeepBach, a graphical model aimed at modeling polyphonic music and specifically hymn-like pieces. We claim that, after being trained on the chorale harmonizations by Johann Sebastian Bach, our model is capable of generating highly convincing chorales in the style of Bach. DeepBach's strength comes from the use of pseudo-Gibbs sampling coupled with an adapted representation of musical data. This is in contrast with many automatic music composition approaches which tend to compose music sequentially. Our model is also steerable in the sense that a user can constrain the generation by imposing positional constraints such as notes, rhythms or cadences in the generated score. We also provide a plugin on top of the MuseScore music editor making the interaction with DeepBach easy to use.

Heterojunction field effect transistor

Abstract: A heterojunction field effect transistor realizing a high performance by a significant decrease. in source resistance while maintaining a sufficiently high gate resistivity to voltage is provided. Sequentially stacked on a c-face sapphire substrate via a buffer layer are an undoped GaN layer, undoped Al 0 .3 Ga 07 N layer, undoped GaN channel layer, undoped Al 0 .15 Ga 0 .85 N spacer layer, n-type Al 0 .15 Ga 0 .85 N electron supply layer, graded undoped Al z Ga 1-z N barrier layer and n-type Al 0 .06 Ga 0 .94 N contact layer, and a gate electrode, source electrode and drain electrode are formed on the n-type Al 0 .06 Ga 0 .94 N contact layer to form a AlGaN/GaN HEMT. The Al composition z in the graded undoped Al z Ga 1-z N barrier layer continuously decreases from 0.15 to 0.06, for example, from the n-type Al 0 .15 Ga 0 .85 N electron supply layer toward the n-type Al 0 .06 Ga 0 .94 N contact layer. An n ++ -type GaN contact layer may be formed on the n-type Al 0 .06 Ga 0 .94 N contact layer in the region for the source electrode and the drain electrode, and the source electrode and the drain may be formed on it.

Synchronization of audio/video information.

Abstract: A compressed video signal and a compressed audio signal decoding apparatus which including a local access unit counter intended for digital AV applications where access unit headers (e.g. frame headers, audio unit headers or other kind of data unit headers) may be lost or generated by storage media or transmission errors. In order to prevent a resulting AV sync error a value called "access unit count" is included in each elementary stream. With this value each decoder can detect lost or false access unit headers, and correct the AV synchronization. In order to support editing, an extra bit can be added to indicate discontinuity in the access unit count.

Reducing Damage to Si Substrates during Gate Etching Processes

Abstract: The mechanism of formation of a "Si recess" that appears during gate poly-Si etching was studied. Hydrogen in HBr plasma penetrates through a thin gate oxide film and generates dislocated sites in the Si substrate. We developed a molecular dynamics (MD) simulation to clarify both the penetration depth of H and O and the dislocation of Si. The damage was successfully minimized by controlling the high energy peak in the ion energy distribution function (IEDF) to be lower than the threshold energy of ion penetration.

Solid-state imaging device and camera

Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well