Sony Broadcast & Professional Research Laboratories

About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Image processing. The organization has 38708 authors who have published 63864 publications receiving 865637 citations.

Display unit and backlight unit

Abstract: The screen is exempt from variation in brightness due to uneven temperature distribution. The color liquid crystal display unit has a color display panel of transmissive type and a backlight unit placed behind the color display panel. The backlight unit has a plurality of LEDs connected in series, the drive unit to drive the LEDs in correspondence with the LEDs, and the temperature sensor to detect the temperature of LEDs. The groups of LEDs are arranged in regions where the display unit has the same temperature. The drive unit controls current to be supplied to LEDs in response to temperature detected by the temperature sensor so that the LEDs retain the constant brightness even when the LEDs fluctuate in temperature.

Multi-Scale multi-band densenets for audio source separation

Abstract: This paper deals with the problem of audio source separation. To handle the complex and ill-posed nature of the problems of audio source separation, the current state-of-the-art approaches employ deep neural networks to obtain instrumental spectra from a mixture. In this study, we propose a novel network architecture that extends the recently developed densely connected convolutional network (DenseNet), which has shown excellent results on image classification tasks. To deal with the specific problem of audio source separation, an up-sampling layer, block skip connection and band-dedicated dense blocks are incorporated on top of DenseNet. The proposed approach takes advantage of long contextual information and outperforms state-of-the-art results on SiSEC 2016 competition by a large margin in terms of signal-to-distortion ratio. Moreover, the proposed architecture requires significantly fewer parameters and considerably less training time compared with other methods.

Information processing device, information processing method, and program

Abstract: There is provided an information processing device including a display section configured to display a first object in a virtual three-dimensional space having a depth direction of a display screen, an operation section configured to acquire an operation for moving the first object in at least the depth direction, and a controller configured to move the first object on the display screen in accordance with the acquired operation, to execute, when a region of the first object overlaps a first overlap determination region, a first process to one or both of the first and second objects, and to execute, when the region of the first object overlaps a second overlap determination region, a second process to one or both of the first and second objects. The first overlap determination region may be a region obtained by extending the second overlap determination region in at least the depth direction.

Voice messaging transceiver message duration indicator and method

Abstract: A message duration indicator apparatus and method for use with a portable voice messaging transceiver including a message recording memory, a microphone, a remaining message memory indicator and an indicator controller provide an indication to the user of the approaching end of the message period to stimulate the user to record a message in as short a time as possible.

Semiconductor laser device

Abstract: Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value theta// of a FFP in a direction horizontal to a hetero interface, and a high kink level (ie, good light output-injected current characteristics over the high-output range) This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge It has a stacked film composed of an SiO2 film (600 A thick) and an amorphous Si film (300 A thick) which are formed on the SiO2 film by vapor deposition The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference Deltan, and a larger value of theta// without the necessity for reducing the ridge width