South University of Science and Technology of China

About: South University of Science and Technology of China is a based out in . It is known for research contribution in the topics: Chemistry & Computer science. The organization has 1187 authors who have published 1940 publications receiving 67330 citations.

Valley polarization in MoS2 monolayers by optical pumping

Abstract: Most electronic devices exploit the electric charge of electrons, but it is also possible to build devices that rely on other properties of electrons. Spintronic devices, for example, make use of the spin of electrons. Valleytronics is a more recent development that relies on the fact that the conduction bands of some materials have two or more minima at equal energies but at different positions in momentum space. To make a valleytronic device it is necessary to control the number of electrons in these valleys, thereby producing a valley polarization. Single-layer MoS(2) is a promising material for valleytronics because both the conduction and valence band edges have two energy-degenerate valleys at the corners of the first Brillouin zone. Here, we demonstrate that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2). Our results, and similar results by Mak et al., demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS(2) monolayers.

Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Abstract: Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZT(dev), and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Here, we report a record high ZT(dev) ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals. The exceptional performance arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.

Imide- and Amide-Functionalized Polymer Semiconductors

Abstract: Xugang Guo,*,† Antonio Facchetti,*,‡,§ and Tobin J. Marks*,‡ †Department of Materials Science and Engineering, South University of Science and Technology of China, No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China ‡Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, United States

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Abstract: We report systematic optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at multilayers to a direct-gap one at monolayers. A hot luminescence peak (B) is observed at ~0.4 eV above the prominent band edge peak (A) in all samples. The magnitude of A-B splitting is independent of the number of layers and coincides with the spin-valley coupling strength in monolayers. Ab initio calculations show that this thickness independent splitting pattern is a direct consequence of the giant spin-valley coupling which fully suppresses interlayer hopping at valence band edge near K points because of the sign change of the spin-valley coupling from layer to layer in the 2H stacking order.

Material insights and challenges for non-fullerene organic solar cells based on small molecular acceptors

Abstract: The field of non-fullerene organic solar cells has experienced rapid development during the past few years, mainly driven by the development of novel non-fullerene acceptors and matching donor semiconductors. However, organic solar cell material development has progressed via a trial-and-error approach with limited understanding of the materials’ structure–property relationships and the underlying device physics of non-fullerene devices. In addition, the availability of hundreds of donor and acceptor semiconductors creates an extremely large pool of possible donor–acceptor combinations, which poses a daunting challenge for rational material screening and matching. This Review describes several important conceptual aspects of the emerging non-fullerene devices by highlighting key contributions that provided fundamental insights regarding rational material design, donor–acceptor pair matching, blend morphology control and the reduced voltage losses in non-fullerene organic solar cells. We also discuss the key challenges that need to be addressed to develop more-efficient non-fullerene organic solar cells.