Showing papers by "STMicroelectronics published in 1971"

Dynamic random access memory with a secondary source voltage to reduce injection

Abstract: Dynamic random access memory utilizing MOSFET transistors formed on a single semiconductor chip is described. The integrated circuit has internal circuits, including storage cells arrayed in rows and columns, and interface circuits, including address decoders, etc., for connecting the internal circuits to control circuitry external of the integrated circuit. A primary drain voltage terminal and a primary source voltage terminal are provided for the integrated circuit and are used for the interface circuit. Circuit means formed on the chip establishes a secondary source voltage that is nearer the primary drain voltage than the primary source voltage. The secondary source voltage is used for the internal circuits and reduces loss of data due to injection from the internal circuits.