Showing papers by "STMicroelectronics published in 1977"
Patent•
18 Jul 1977TL;DR: In this paper, a high performance inverter circuit using MOSFETs having varying threshold voltages produced by selectively varying ion implantation doses in the channels of the MOS-FET was described.
Abstract: The invention disclosed herein is a high performance inverter circuit using MOSFETs having varying threshold voltages produced by selectively varying ion implantation doses in the channels of the MOSFETs and using a slightly depletion type MOSFET, rather than a conventional depletion type, in the output stage.
6 citations