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Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
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Journal ArticleDOI
Lucile Arnaud, G. Tartavel, T. Berger1, D. Mariolle, Y. Gobil, I. Touet 
TL;DR: Grain sizes and crystallographic orientations of Cu were analyzed versus linewidth in damascene Cu interconnects as discussed by the authors, and the results showed that even with a polycrystalline crystallographic orientation, PVD-Cu samples showed a better activation energy value E a = 1.02 eV.

75 citations

Patent
03 Oct 2005
TL;DR: In this paper, an accelerometer sensor detects a vertical acceleration generated during a step and adapts the first reference threshold as a function of an envelope of the amplitude of the acceleration signal.
Abstract: In a pedometer device for detecting and counting steps of a user on foot, an accelerometer sensor detects a vertical acceleration generated during the step. A processing unit, connected to the accelerometer sensor, processes an acceleration signal relating to the acceleration in order to detect the occurrence of a step, and in particular compares the acceleration signal with a first reference threshold. The processing unit automatically adapts the first reference threshold as a function of the acceleration signal. In particular, the processing unit modifies the first reference threshold as a function of an envelope of the amplitude of the acceleration signal.

75 citations

Journal ArticleDOI
01 Mar 1997
TL;DR: This paper discusses design technology issues for embedded systems using processor cores, with a focus on software compilation tools, and conducts a comprehensive survey of both existing and new software compilation techniques that are considered important in the context of embedded processors.
Abstract: The increasing use of embedded software, often implemented on a core processor in a single-chip system, is a clear trend in the telecommunications, multimedia, and consumer electronics industries. A companion paper (Paulin et al., 1997) presents a survey of application and architecture trends for embedded systems in these growth markets. However, the lack of suitable design technology remains a significant obstacle in the development of such systems. One of the key requirements is more efficient software compilation technology. Especially in the case of fixed-point digital signal processor (DSP) cores, it is often cited that commercially available compilers are unable to take full advantage of the architectural features of the processor. Moreover, due to the shorter lifetimes and the architectural specialization of many processor cores, processor designers are often compelled to neglect the issue of compiler support. This situation has resulted in an increased research activity in the area of design tool support for embedded processors. This paper discusses design technology issues for embedded systems using processor cores, with a focus on software compilation tools. Architectural characteristics of contemporary processor cores are reviewed and tool requirements are formulated. This is followed by a comprehensive survey of both existing and new software compilation techniques that are considered important in the context of embedded processors.

75 citations

Proceedings ArticleDOI
06 Nov 2009
TL;DR: In this article, a double-polysilicon FSA-SEG SiGe:C HBT with a record peak f MAX of 423 GHz (f T = 273 GHz) is demonstrated.
Abstract: This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f MAX . The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f MAX of 423 GHz (f T = 273 GHz) is demonstrated in SiGe:C HBT technology.

75 citations

Journal ArticleDOI
TL;DR: In this paper, the authors report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs and compare the modeled and measured data at room temperature.

75 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781