Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Transistor, Signal, Integrated circuit, CMOS, Layer (electronics)
Papers published on a yearly basis
Papers
More filters
•
18 Jul 1995TL;DR: In this article, the drain and source P-pockets are formed in two different high-angle boron implantation steps designed to optimize implantation energy and dosage for ensuring scalability of the cell and avoiding impairment of the snap-back voltage.
Abstract: A nonvolatile memory having a cell comprising an N+ type source region and drain region embedded in a P- type substrate and surrounded by respective P-pockets. The drain and source P-pockets are formed in two different high-angle boron implantation steps designed to optimize implantation energy and dosage for ensuring scalability of the cell and avoiding impairment of the snap-back voltage. The resulting cell also presents a higher breakdown voltage as compared with known cells.
74 citations
•
11 May 1998TL;DR: In this paper, a four transistor dynamic memory cell architecture and refresh technique is proposed to reduce the refresh rate overhead in a memory array and increase the overall memory array bandwidth, without activating the read sense amplifier, resulting in lower power consumption and the retention of most recently read data.
Abstract: A four transistor dynamic memory cell
architecture and refresh technique which allows for
cell refresh to occur during a read operation. The
access and memory transistors of the individual memory
cells are fabricated with a relative width-to-length
ratio such that it is sufficient to merely activate
the associated word line to perform the refresh
operation. This is accomplished without activating
the read sense amplifier resulting in lower power
consumption and the retention of most recently read
data. Multiple word lines may be activated
concurrently utilizing the technique disclosed to
further reduce the refresh rate overhead in a memory
array and increase the overall memory array bandwidth.
74 citations
••
TL;DR: An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented, based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer.
Abstract: An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented in this paper. It integrates the overall RF part, from the balun up to the first stage of the channel filter, as well as the cells for the LO signal conditioning. The proposed architecture is based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer. When integrated in a 90 nm CMOS technology, the receiver front-end exhibits an area of only 0.07 mm2, or 0.23 mm2 when including an input integrated balun. The overall chip consumes 4 mA from a single 1.35 V supply voltage and it achieves a 35 dB conversion gain from input power in dBm to output voltage in dBvpk, a 7.5 dB NF value, -10 dBm of IIP3 and more than 32 dB of image rejection.
74 citations
•
13 Jun 2011TL;DR: In this paper, a touch screen capable of correctly identifying multiple touches employs multiple active line arrays oriented to provide multi-dimensional data, where three arrays of capacitance based active lines are each distinctly oriented to form a plurality of intersections.
Abstract: A touch screen capable of correctly identifying multiple touches employs multiple active line arrays oriented to provide multi-dimensional data. Three arrays of capacitance based active lines are each distinctly oriented to form a plurality of intersections. A first and second array are generally oriented perpendicularly while a third array is oriented to bisect the resulting matrix such that the active lines of the third array also intersect the existing vertices. As a result of a touch each active line array identifies the location of the touch from three distinct directions. Ambiguity from dual touch scenarios existing in dual array systems is removed by providing an additional reference.
74 citations
••
13 Sep 1999TL;DR: In this article, the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current has been investigated, showing a quasi linear kinetics with the cumulative dose.
Abstract: The excess leakage current across ultra-thin dielectrics has been studied for different ionizing radiation sources. Namely, X-rays, 8 MeV electrons, and three ion beams with different LETs values have been used on large area MOS capacitors with 4-nm thick oxides. Small oxide fields were applied during irradiation, reaching 3 MV/cm at most. For ionizing radiation with relatively low LET (<10 MeV cm/sup 2//mg), only Radiation Induced Leakage Current (RILC) was observed, due to the formation of neutral defects mediating electron tunneling via a single oxide trap. For high LET values, instead, the gate leakage current could be described by an empirical relation proper of Soft Breakdown (SB) phenomena detected after electrical stress. Moreover, the typical random telegraph signal noise feature of this Radiation induced Soft Breakdown (RSB) currents was observed during and after irradiation. RSB can be attributed to conduction through a multi-defect path across the oxide, produced by the residual damage of dense ion tracks. The oxide field applied during irradiation enhances the RSB intensity, but RSB can be achieved even for irradiation at zero field, being LET the main factor leading to RSB activation. The dose dependence of both RILC and QB have been investigated, showing a quasi linear kinetics with the cumulative dose. We have also studied the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current.
74 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |