scispace - formally typeset
Search or ask a question
Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
More filters
Patent
18 Jul 1995
TL;DR: In this article, the drain and source P-pockets are formed in two different high-angle boron implantation steps designed to optimize implantation energy and dosage for ensuring scalability of the cell and avoiding impairment of the snap-back voltage.
Abstract: A nonvolatile memory having a cell comprising an N+ type source region and drain region embedded in a P- type substrate and surrounded by respective P-pockets. The drain and source P-pockets are formed in two different high-angle boron implantation steps designed to optimize implantation energy and dosage for ensuring scalability of the cell and avoiding impairment of the snap-back voltage. The resulting cell also presents a higher breakdown voltage as compared with known cells.

74 citations

Patent
Alain Artiere1
11 May 1998
TL;DR: In this paper, a four transistor dynamic memory cell architecture and refresh technique is proposed to reduce the refresh rate overhead in a memory array and increase the overall memory array bandwidth, without activating the read sense amplifier, resulting in lower power consumption and the retention of most recently read data.
Abstract: A four transistor dynamic memory cell architecture and refresh technique which allows for cell refresh to occur during a read operation. The access and memory transistors of the individual memory cells are fabricated with a relative width-to-length ratio such that it is sufficient to merely activate the associated word line to perform the refresh operation. This is accomplished without activating the read sense amplifier resulting in lower power consumption and the retention of most recently read data. Multiple word lines may be activated concurrently utilizing the technique disclosed to further reduce the refresh rate overhead in a memory array and increase the overall memory array bandwidth.

74 citations

Journal ArticleDOI
TL;DR: An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented, based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer.
Abstract: An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented in this paper. It integrates the overall RF part, from the balun up to the first stage of the channel filter, as well as the cells for the LO signal conditioning. The proposed architecture is based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer. When integrated in a 90 nm CMOS technology, the receiver front-end exhibits an area of only 0.07 mm2, or 0.23 mm2 when including an input integrated balun. The overall chip consumes 4 mA from a single 1.35 V supply voltage and it achieves a 35 dB conversion gain from input power in dBm to output voltage in dBvpk, a 7.5 dB NF value, -10 dBm of IIP3 and more than 32 dB of image rejection.

74 citations

Patent
13 Jun 2011
TL;DR: In this paper, a touch screen capable of correctly identifying multiple touches employs multiple active line arrays oriented to provide multi-dimensional data, where three arrays of capacitance based active lines are each distinctly oriented to form a plurality of intersections.
Abstract: A touch screen capable of correctly identifying multiple touches employs multiple active line arrays oriented to provide multi-dimensional data. Three arrays of capacitance based active lines are each distinctly oriented to form a plurality of intersections. A first and second array are generally oriented perpendicularly while a third array is oriented to bisect the resulting matrix such that the active lines of the third array also intersect the existing vertices. As a result of a touch each active line array identifies the location of the touch from three distinct directions. Ambiguity from dual touch scenarios existing in dual array systems is removed by providing an additional reference.

74 citations

Journal ArticleDOI
13 Sep 1999
TL;DR: In this article, the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current has been investigated, showing a quasi linear kinetics with the cumulative dose.
Abstract: The excess leakage current across ultra-thin dielectrics has been studied for different ionizing radiation sources. Namely, X-rays, 8 MeV electrons, and three ion beams with different LETs values have been used on large area MOS capacitors with 4-nm thick oxides. Small oxide fields were applied during irradiation, reaching 3 MV/cm at most. For ionizing radiation with relatively low LET (<10 MeV cm/sup 2//mg), only Radiation Induced Leakage Current (RILC) was observed, due to the formation of neutral defects mediating electron tunneling via a single oxide trap. For high LET values, instead, the gate leakage current could be described by an empirical relation proper of Soft Breakdown (SB) phenomena detected after electrical stress. Moreover, the typical random telegraph signal noise feature of this Radiation induced Soft Breakdown (RSB) currents was observed during and after irradiation. RSB can be attributed to conduction through a multi-defect path across the oxide, produced by the residual damage of dense ion tracks. The oxide field applied during irradiation enhances the RSB intensity, but RSB can be achieved even for irradiation at zero field, being LET the main factor leading to RSB activation. The dose dependence of both RILC and QB have been investigated, showing a quasi linear kinetics with the cumulative dose. We have also studied the effect of modifying the angle of incidence of the ion beam on the intensity of the gate leakage current.

74 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
Network Information
Related Institutions (5)
Intel
68.8K papers, 1.6M citations

92% related

Motorola
38.2K papers, 968.7K citations

91% related

Samsung
163.6K papers, 2M citations

90% related

NEC
57.6K papers, 835.9K citations

89% related

Toshiba
83.6K papers, 1M citations

89% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781