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Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
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Journal ArticleDOI
D. Fleury1, Antoine Cros1, G. Bidal1, Julien Rosa1, G. Ghibaudo1 
TL;DR: In this paper, the source/drain series resistance of MOSFETs is extracted in a way that the result is insensitive to effective length and mobility variations, and applied to 45-nm bulk and fully depleted SOI MOSFLETs with high-κ and metal gate, having channel length down to 22 nm.
Abstract: This letter demonstrates a new technique to extract the source/drain series resistance of MOSFETs. Unlike the well-known total resistance techniques, Rsd is extracted in a way that the result is insensitive to effective length and mobility variations. The technique has been successfully applied to 45-nm bulk and fully depleted SOI MOSFETs with high-κ and metal gate, having channel length down to 22 nm. The technique provides a high accuracy and allows fast measurements and statistical analysis.

74 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated carbon-doped GeTe (GeTeC) as a novel material for phase-change memories (PCM) and reported very good data retention properties and reduction of RESET current.
Abstract: This paper investigates Carbon-doped GeTe (GeTeC) as novel material for Phase-Change Memories (PCM). In the first part of the manuscript, a study of GeTeC blanket layers is presented. Focus is on GeTeC amorphous phase stability, which has been studied by means of optical reflectivity and electrical resistivity measurements, and on GeTeC structure and composition, analyzed by XRD and Raman spectroscopy. Then, electrical characterization of GeTeC-based PCM devices is reported: resistance drift, data retention performances, RESET current and power, and SET time have been investigated. Very good data retention properties and reduction of RESET current make GeTeC suitable for both embedded and stand-alone PCM applications, thus suggesting GeTeC as promising candidate to address some of the major issues of today’s PCM technology.

74 citations

Proceedings ArticleDOI
15 Jul 2008
TL;DR: In this article, a single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165 GHz oscillator and static frequency divider is reported in a SiGe HBT process with fT/fMAX of 270 GHz/340 GHz.
Abstract: A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a SiGe HBT process with fT/fMAX of 270 GHz/340 GHz. This marks the highest frequency transceiver in silicon and the highest level of functional integration above 100 GHz in any semiconductor technology. The downconversion gain peaks at -5 dB and the transmit power is -5 dBm when measured at the transceiver pads. Both degrade by approximately 25 dB when measured above the antennas of the transceiver with on-die antennas. The experimental performance of dipole (with and without floating metal strips) and patch antennas is also investigated. The measured 15-dB gain of a standalone amplifier is centered at 170 GHz and remains higher than 10 dB from 160 GHz to 180 GHz while the saturated output power is 0 dBm at 165 GHz.

74 citations

Patent
31 Dec 1996
TL;DR: In this article, a semiconductor device structure and method for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region is presented, where a region of second conductivity is located a predetermined distance away from the device region.
Abstract: A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.

74 citations

Journal ArticleDOI
TL;DR: A novel approach for estimating the global motion between frames using a curve warping technique known as dynamic time warping, which guarantees robustness also in presence of sharp illumination changes and moving objects.
Abstract: The widespread diffusion of hand-held devices with video recording capabilities requires the adoption of reliable digital Stabilization methods to enjoy the acquired sequences without disturbing jerkiness. In order to effectively get rid of the unwanted camera movements, an estimate of the global motion between adjacent frames is necessary. This paper presents a novel approach for estimating the global motion between frames using a curve warping technique known as dynamic time warping. The proposed algorithm guarantees robustness also in presence of sharp illumination changes and moving objects.

74 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781