STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Process for controlling the read circuit of a memory plane and corresponding memory device

Abstract: The reading of a reference memory slot placed outside the memory plane is detected by comparing the voltage difference at the terminals of one of the two bit lines of the additional column with VDD/2. Only the read amplifiers of the memory are then activated.

Bluetooth sniff mode power saving

Abstract: A Bluetooth master radio frequency unit (20) addresses a slave radio frequency unit, to enable the slave to synchronize to the master, by sending poll packets and optionally null packets over an active link, the master being arranged so that receipt of a response from the slave unit to a poll packet is sufficient to maintain the active link. The slave unit does not have to respond to all of the poll packets. This approach can allow the slave to preserve more (transmit) power by going into a deep sleep mode in which a low power oscillator may be used while still allowing the master unit to detect whether the slave has resynchronized or not (and thus to update a Link Supervision Timer for example).

Integrated circuit memory device

Abstract: An improved sensing device for an integrated circuit memory device is provided. In particular, the memories can be those in which memory cells are formed by insulated gate transistors, such as EPROMs and flash EPROMs. Conventionally, such memories use static sence amplifiers. The present invention provides a dynamic sence amplifier suitable for use in these memories.

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

Abstract: A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained by both three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.