STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

A fully symmetrical sense amplifier for non-volatile memories

Abstract: This paper presents a fully symmetrical sense amplifier topology for advanced non-volatile memories. The proposed structure ensures zero systematic offset, together with adequate rejection of disturbs coming from capacitive coupling with noisy substrate, power supply, and ground. The presented topology has been designed for phase change memories, however, it is also suitable for use in other non-volatile storage devices such as magnetic RAMs and Flash memories. Experimental results on sensing time, offset, and sensitivity demonstrated the effectiveness of the proposed scheme.

Reliable 300 mm Wafer Level Hybrid Bonding for 3D Stacked CMOS Image Sensors

Abstract: 3D Stacked Image sensor is the stacking of a Back-Side Illuminated (BSI) CMOS Image Sensor on a logic die. It enables compact size, higher performances and additional functionalities compared to standard BSI sensors. The highest footprint reduction is obtained with 3D hybrid bonding with metal interconnects between top and bottom tiers. Hybrid bonding process with oxide / copper direct bonding allows the highest scalability of interconnect pitch. In this study we present the morphological and electrical characterizations of a test vehicle. The hybrid bonding of wafers from two different technology nodes is performed using a dual damascene integration for the hybrid bonding level. The main parameters to assess the bonding interface quality are analyzed such as the influence of the pad design, the impact of reworkability and wafer -- to-wafer overlays. The process robustness is studied through reliability tests and electromigration measurements.

Integrated active low-pass filter of the first order

Abstract: An integrated, low-pass filter of the first order made using the switched capacitors technique utilizes advantageously a single switched capacitor and only two switches in contrast to the filters of the prior art which utilize two switched capacitors and four switches. The filter of the invention requires a smaller integration area and moreover exhibits a greater precision of its DC gain.

Ligand effects on the air stability of coppernanoparticles obtained from organometallic synthesis

Abstract: Low-polydispersity copper nanoparticles (NPs) are prepared through hydrogenolysis of various organometallic copper precursors in an organic medium at moderate temperature. The effects of the precursor composition and the nature of the additional surfactants on the structure and stability of NPs are characterized by TEM and UV-Vis analysis. The improved air stability of copper NPs originating from amidinate copper and stabilized by an alkylamine compound (hexadecylamine) is evidenced and compared with the effect of a long chain carboxylic acid (oleic acid).

Electrical transport properties of transition‐metal disilicide films

Abstract: Electrical resistivity in the temperature range of 2–1100 K and Hall‐effect measurements from 10 to 300 K of CoSi2, MoSi2, TaSi2, TiSi2, and WSi2 polycrystalline thin films were studied. Structure, composition, and impurities in these films were investigated by a combination of techniques of Rutherford backscattering spectroscopy, x‐ray diffraction, transmission electron microscopy, and Auger electron spectroscopy. These silicides are metallic, yet there is a remarkable difference in their residual resistivity values and in their temperature dependence of the intrinsic resistivities. For CoSi2, MoSi2, and TiSi2, the phonon contribution to the resistivity was found to be linear in temperature above 300 K. At high temperatures, while a negative deviation from the linearity followed by a quasisaturation was observed for TaSi2, the resistivity data of WSi2 showed a positive deviation from linearity. It is unique that the residual resistivity, ρ(2 K), of the WSi2 films is quite high, yet the temperature depend...