Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Transistor, Signal, Integrated circuit, CMOS, Layer (electronics)
Papers published on a yearly basis
Papers
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01 Aug 2003TL;DR: In this paper, a device for the correction of the power factor in power supply units with forced switching operating in transition mode is described, which comprises a converter and a control device coupled to said converter so as to obtain from an alternating network input voltage a regulated output voltage on the output terminal.
Abstract: A device for the correction of the power factor in power supply units with forced switching operating in transition mode is described. The device comprises a converter and a control device coupled to said converter so as to obtain from an alternating network input voltage a regulated output voltage on the output terminal. The converter comprises a power transistor and the control device comprises a pilot circuit suitable for determining the period of switched-on time and the period of switched-off time of said power transistor and control means coupled to said pilot circuits and with said converter and which are capable of prolonging said period of switched-on time of the power transistor at the instants of time in which the alternating network voltage substantially assumes the value zero.
67 citations
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30 Jun 1993TL;DR: In this paper, a fuse element having at least one fuse and a transistor element with at most one transistor are placed in parallel to each other between a voltage supply of a gate of the integrated circuit and a corresponding voltage supply.
Abstract: According to the present invention, integrated circuitry provides for the ability to selectively introduce delays into the timing of the integrated circuit, without the expense and time associated with methods used in the prior art. As a minimum, a fuse element having at least one fuse and a transistor element having at least one transistor are placed in parallel to each other between a voltage supply of a gate of the integrated circuit and a corresponding voltage supply of the integrated circuit. When the fuse element is intact, the fuse element provides a relatively low resistance path from the voltage supply of the gate and the corresponding voltage supply of the integrated circuit. However, upon blowing the fuse element, this low resistance path is no longer available. An increased resistance path through the transistor element must be used, and the integrated circuit is slowed down accordingly. The amount of delay introduced to the delay element is a function of the values of the transistors in the transistor element.
67 citations
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TL;DR: It is shown that the ElGamal-like and RSA-like algorithms (when Chebyshev polynomials are employed) are as secure as the original Elgamal and RSA algorithms.
Abstract: We propose public-key encryption algorithms based on Chebyshev polynomials, which are secure, practical, and can be used for both encryption and digital signature. Software implementation and properties of the algorithms are discussed in detail. We show that our ElGamal-like and RSA-like algorithms (when Chebyshev polynomials are employed) are as secure as the original ElGamal and RSA algorithms.
67 citations
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06 Dec 1993TL;DR: In this article, a method for planarizing integrated circuit topographies is proposed, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer.
Abstract: A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on glass.
66 citations
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TL;DR: In this article, an innovative solution to bypass shaded PV cells instead of a traditional Schottky diode, in order to avoid overheating of cells in the case of partial shading is presented.
Abstract: There is an increasing focus on reducing costs and improving efficiency for photovoltaic (PV) cells and modules as well as finding a more efficient approach to the product manufacturing. This letter introduces an innovative solution to bypass shaded PV cells instead of a traditional Schottky diode, in order to avoid overheating of cells in the case of partial shading. The goal is to reduce the power dissipation and improve the general efficiency of a PV generator. A novel device called cool bypass switch is then presented. It is made up of a Power MOS driven by a controller with the task to charge a storage capacitor. Tests and comparisons with standard Schottky diodes are then performed and experimental results are reported in terms of current intensity and operating temperature. The resulting circuit shows better diode performances and considerably lower dissipated power in shading condition. The little packing cases allow an easy integration inside the PV module. In comparison with traditional diodes, the integrated power switch provides a negligible leakage current during PV panel energy production.
66 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |