STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

Abstract: Heavy ions experiments are carried out on commercial 90 nm and 65 nm SRAMs. The contribution of single and multiple cell upsets (MCUs) are discussed as a function of the LET for different memory cell areas and for triple well usage. Once again, well engineering plays a key role on MCU and SEE response of SRAM. Full 3-D TCAD simulations investigate the occurrence of parasitic bipolar effect.

16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation

Abstract: In nanometer MOSFETs, because of the small channel size, mesoscopic and even quantum effects can come into play We have fabricated l6 nm NMOS devices featuring I/sub on/=400 /spl mu/A//spl mu/m and I/sub off/=08 /spl mu/A//spl mu/m and demonstrate that the FET principle is still confirmed at room temperature We have deliberately used a non-overlapped SD/gate architecture, showing that, with adapted channel doping, it not only performs equally as well as the overlapped one, but also shows 1000/spl times/ reduced dispersion and is easily manufacturable Finally, we show that quantization of energy in the channel motivates a study of performance at low temperature, and that the leading effect at low temperature and low voltage is Coulomb blockade

Communication system with statistical control of gain

Abstract: In a communication receiver having a variable gain amplifier and an automatic gain controller, the automatic gain controller is operable to measure values of a system performance parameter indicative of the performance of the communication system, determine a statistical value of the system performance parameter, and adjust the variable gain of the amplifier in response to the statistical value to maintain the statistical value in a control range.

Distributed MOS varactor biasing for VCO gain equalization in 0.13 /spl mu/m CMOS technology

Abstract: The paper describes work done on a LC-VCO to linearize its frequency-voltage (Kvco) characteristic in order to extend its versatility. The technology used is a standard 0.13 /spl mu/m CMOS supplied by 1.2 V. The optimization is made on the varactor stage of the resonator and gives a nearly constant Kvco (140/spl plusmn/10 MHz/V from 2.36 GHz to 2.44 GHz), in spite of the MOS varactor non-linear characteristic, with still a good pushing (9 MHz/V) and constant phase noise (-126 dBc/Hz at 3 MHz offset).