STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Wireless LAN data rate adaptation

Abstract: A WLAN communication system and algorithm that adaptively changes the data transmission rate of a communication channel based on changing channel conditions. The WLAN communication system or algorithm has two modes being a searching mode and a transmission mode. Furthermore, the WLAN communication system or algorithm incorporates an additive increase, multiplicative decrease (AIMD) function into the rate adaptation algorithm.

Phase change memory cell and manufacturing method thereof using minitrenches

Abstract: A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

Abstract: This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.

Method and system for admission control in communication networks, related network and computer program product therefor

Abstract: A system for admission control in a wireless local area network adapted to serve a set of stations and manage real time transmission as well as and TCP/IP sessions includes an access point (AP) configured for: when either a new station joins the network or a new TCP/IP session is being initiated, checking if sufficient bandwidth is available in the network for the new traffic flow associated with the new station or TCP/IP session without interfering with any ongoing real time transmission in the network, and in case no sufficient bandwidth is found to be available, whereby said new traffic flow could interfere with said ongoing real time transmission, blocking such new traffic flow.

A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters

Abstract: This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.