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Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
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Patent
27 Apr 2001
TL;DR: In this paper, a gyroscope is formed by a driving system including a driving mass having an open concave shape; an accelerometer including a sensing mass and comprising mobile sensing electrodes; a linkage connecting the driving mass to the sensing mass.
Abstract: The gyroscope is formed by a driving system including a driving mass having an open concave shape; an accelerometer including a sensing mass and comprising mobile sensing electrodes; a linkage connecting the driving mass to the sensing mass. The sensing mass is surrounded on three sides by the driving mass and has a peripheral portion not facing the sensing mass. The mobile sensing electrodes extend integral with the sensing mass from the peripheral portion not facing the driving mass and are interleaved with fixed sensing electrodes. Thereby, there are no passing electrical connections extending below the sensing mass. Moreover the linkage includes springs placed equidistant from the center of gravity of the accelerometer, and the gyroscope is anchored to the substrate with anchoring springs placed equidistant from the center of gravity of the assembly formed by the driving system and by the accelerometer.

60 citations

Journal ArticleDOI
TL;DR: In this paper, the authors discuss carrier mobilities in the quantum non-equilibrium Green's functions (NEGF) framework and introduce a new paradigm for the definition of the partial mobility associated with a given elastic scattering mechanism, taking phonons (PH) as a reference.
Abstract: We discuss carrier mobilities in the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a method for the extraction of the mobility that is free from contact resistance contamination and with minimal needs for ensemble averages. We focus on silicon thin films as an illustration, although the method can be applied to various materials such as semiconductor nanowires or carbon nanostructures. We then introduce a new paradigm for the definition of the partial mobility μM associated with a given elastic scattering mechanism “M,” taking phonons (PH) as a reference (μM−1=μPH+M−1−μPH−1). We argue that this definition makes better sense in a quantum transport framework as it is free from long range interference effects that can appear in purely ballistic calculations. As a matter of fact, these mobilities satisfy Matthiessen's rule for three mechanisms [e.g., surface roughness (SR), remote Coulomb scattering (RCS) and phonons] much better than the usual, single mechanism calculations. We als...

60 citations

Journal ArticleDOI
TL;DR: In this paper, the design and measurement results of a millimeter-wave beam switching antenna are presented and several antenna prototypes have been fabricated and measured in planar and conformal installations.
Abstract: In this letter, the design and measurement results of a millimeter-wave beam switching antenna are presented. Several antenna prototypes have been fabricated and measured in planar and conformal installations. The developed prototype consists of three antenna arrays of 16 patch elements in each array and it is operating at 61 GHz with linear polarization. A single-pole three-throw semiconductor switch is attached to the manufactured prototype using copper pillar attachment. The main beam direction of the convex antenna can be changed by switching between the antenna arrays in the prototype. Half sphere 3-D radiation pattern measurements have been performed. For the convex prototype, bent on the cylinder with radius 25 mm, beam switching with ${-{\hbox {32}}^\circ / + {\hbox {34}}^\circ} $ degrees is achieved.

60 citations

Patent
12 May 2008
TL;DR: An embodiment of a wireless galvanic isolator device is formed by a transmitter circuit, a receiver circuit, and a wireless coupling structure, arranged between the transmitter circuit and the receiver circuit as discussed by the authors.
Abstract: An embodiment of a wireless galvanic isolator device is formed by a transmitter circuit, a receiver circuit, and a wireless coupling structure, arranged between the transmitter circuit and the receiver circuit The wireless coupling structure is formed by a pair of antennas each arranged on an own die and integrated together with the respective transmitter and receiver circuit The two dice may be arranged adjacent to each other in a planar configuration or arranged on top of each other and bonded together

60 citations

Journal ArticleDOI
TL;DR: In this paper, the authors describe a scheme to produce arrays of conductive strips with pitch in the nanometre length scale (NLS) without the use of electron- or ion-beam lithography.

60 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781