STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

System and method for restructuring data strings

Abstract: A computer and a method of operating a computer is disclosed which allow manipulation of data values in the context of the execution of so-called "packed instructions". Packed instructions are carried out on packed operands. A packed operand comprises a data string consisting of a plurality of sub-strings, each defining a particular data value or object. The invention relates to a restructuring instruction which allows objects to be reorganised within a data string thereby minimising loading and storing operations to memory.

DC-to-DC converter functioning in a pulse-skipping mode with low power consumption and PWM inhibit

Abstract: Switching losses in a DC-to-DC converter idling in a pulse-skipping mode are reduced by inhibiting any intervening turn-off command by a PWM control loop of the converter for as long as the current through the inductor of the converter remains below a minimum threshold value set by a dedicated comparator The method is implemented by employing a comparator with a certain hysteresis and by logically masking the switching to a logic "0" of a high frequency clock (switching) signal of the converter for the entire period of time the current in the inductor remains below the minimum threshold

Accelerator for multi-processing system and method

Abstract: A processing system includes a plurality of processors capable of executing a plurality of threads and supporting at least one of hardware context switching and software context switching. The processing system also includes a hardware concurrency engine coupled to the plurality of processors. The concurrency engine is capable of managing a plurality of concurrency primitives that coordinate execution of the threads by the processors. The concurrency primitives could represent objects, and the processors may be capable of using the objects by reading from and/or writing to addresses in an address space associated with the concurrency engine. Each address may encode an object index identifying one of the objects, an object type identifying a type associated with the identified object, and an operation type identifying a requested operation involving the identified object.

A neural network based generalized response surface multiobjective evolutionary algorithm

Abstract: The practical use of multiobjective optimization tools in industry is still an open issue. A strategy for the reduction of objective functions is often essential, at a fixed degree of Pareto optimal front (POF) approximation accuracy. An extension of single-objective NN-based generalized response surfaces (GRS) methods to POF approximation is proposed. Such an extension is not at all straightforward due to the complex relation between the POF and Pareto optimal set. As a consequence of such complexity, it is extremely difficult to identify a multiobjective analogue of the single-objective current optimum region. Consequently, the design domain search space zooming strategy, which is the core of the GRS method, is to be carefully reconsidered when POF approximation is concerned.

Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation

Abstract: We are presenting new data on the charge loss in large floating gate (FG) memory arrays subjected to heavy ion irradiation. Existing models for charge loss from charged FG and generation-recombination after a heavy ion strike are insufficient to justify (or in contrast with) our experimental results. In particular, the charge loss is by far larger than predicted by existing models, it depends on the number of generated holes, not on those surviving recombination, and it is larger for FGs with larger threshold voltage before irradiation. We show that these data can be explained as the effect of two different mechanisms. The first one is a semi-permanent multi trap-assisted tunneling (TAT), which closely resembles anomalous stress induced leakage current (SILC) in electrically stressed devices. The second mechanism is a transient phenomenon responsible for the largest part of the lost FG charge. Detailed physical modeling of this mechanism is still not available, owing to the limited knowledge of the physical background under these phenomena, but three possible models are explored and discussed.