STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

System for protection of goods against theft

Abstract: A system for protection of goods against theft includes a control unit and protection modules associated with the goods, the control unit including cordless communication means and the protection modules including movement detection circuitry to find out whether the goods are being handled, and cordless communications circuitry to send an alarm message to the control unit if a movement is detected.

Printed media products including data files provided in multiple layers of encoded, colored dots

Abstract: A printed media product, such as a trading card, that has a substrate and an encoded data element applied to a surface of the substrate containing information. The encoded data element includes first, second, and third data layers with first, second, and third patterns of encoded, colored dots defined by a binary encoding scheme. The dots of the first, second, and third layers are different colors separately resolvable by a scanner with decoding software. The colors of the dots are cyan, yellow, and magenta, and the layers are printed so that the dots overlap. The binary encoding scheme includes a two dimensional run length limited code. The printed media product includes a graphics element that can be interpreted by a human user, and typically, the information encoded in the encoded data element layers is related to the information in the graphics element.

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

Abstract: A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.

Vertical gate-all-around TFET

Abstract: A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.