STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Capacitive semiconductor user input device

Abstract: A method of and system for providing user input to a computer, or the like, having a display by detecting a change in fingerprint pattern of a user. The system controls the position of a pointer on a display by detecting motion of ridges and pores of a fingerprint of a user and moving the pointer on the display according to detected motion of the ridges and pores of the fingerprint. The system captures successive images of the fingerprint ridges and pores and detects motion of the ridges and pores based upon the captured successive images.

Congestion-Aware Logic Synthesis

Abstract: In this era of Deep Sub-Micron (DSM) technologies, the impact of interconnects is becoming increasingly important as it relates to integrated circuit (IC) functionality and performance. In the traditional top-down IC design flow, interconnect effects are first taken into account during logic synthesis by way of wireload models. However, for technologies of 0.25 /spl mu/m and below, the wiring capacitance dominates the gate capacitance and the delay estimation based on fanout and design legacy statistics can be highly inaccurate. In addition, logic block size is no longer dictated solely by total cell area, and is often limited by wiring area resources. For these reasons, wiring congestion is an extremely important design factor, and should be taken into consideration at the earliest possible stages of the design flow. In this paper we propose a novel methodology to incorporate congestion minimization within logic synthesis, and present results for industrial circuits that validate our approach.

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Abstract: We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced stress liner effect coupling with faceted RSD. Using the new flow and the stress boosters we demonstrate NFET and PFET drive currents of 640 and 490 µA/µm, respectively, at I off = 300 pA/µm, V DD = 0.9V, and L G = 25nm. Respectable device performance along with low GIDL makes these devices attractive for low power applications. Record low V T variability is achieved with A Vt of 1.25 mV·µm in our high-k/metal-gate ETSOI. The new process flow is also capable of supporting devices with multiple gate dielectric thicknesses as well as analog devices which are demonstrated with excellent transconductance and matching characteristics.

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

Abstract: Sources responsible for local and inter-die threshold voltage (Vt) variability in undoped ultra-thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the first time. Charges in the gate dielectric and/or TiN gate workfunction fluctuations are determined as major contributors to the local Vt variability and it is found that SOI thickness (TSi) variations have a negligible impact down to TSi=7 nm. Moreover, TSi scaling is shown to limit both local and inter-die Vt variability induced by gate length fluctuations. The highest matching performance ever reported for 25 nm gate length MOSFETs is achieved (AVt=0.95 mV.mum), demonstrating the effectiveness of the undoped ultra-thin FDSOI architecture in terms of Vt variability control.

A 700-kHz bandwidth /spl Sigma//spl Delta/ fractional synthesizer with spurs compensation and linearization techniques for WCDMA applications

Abstract: A /spl Sigma//spl Delta/ fractional-N frequency synthesizer targeting WCDMA receiver specifications is presented. Through spurs compensation and linearization techniques, the PLL bandwidth is significantly extended with only a slight increase in the integrated phase noise. In a 0.18-/spl mu/m standard digital CMOS technology a fully integrated prototype with 2.1-GHz output frequency and 35 Hz resolution has an area of 3.4 mm/sup 2/ PADs included, and it consumes 28 mW. With a 3-dB closed-loop bandwidth of 700 kHz, the settling time is only 7 /spl mu/s. The integrated phase noise plus spurs is -45 dBc for the first WCDMA channel (1 kHz to 1.94 MHz) and -65 dBc for the second channel (2.5 to 6.34 MHz) with a worst case in-band (unfiltered) fractional spur of -60 dBc. Given the extremely large bandwidth, the synthesizer could be used also for TX direct modulation over a broad band. The choice of such a large bandwidth, however, still limits the spur performance. A slightly smaller bandwidth would fulfill WCDMA requirements. This has been shown in a second prototype, using the same architecture but employing an external loop filter and VCO for greater flexibility and ease of testing.