Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Transistor, Signal, Integrated circuit, CMOS, Layer (electronics)
Papers published on a yearly basis
Papers
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18 Jun 2007TL;DR: In this paper, a method for manufacturing a lens of a polymer material, comprises producing in the core of the lens or on the surface of the latter at least one opaque zone having an optical function, by locally degrading the molecular structure of the polymer material using a beam of laser light.
Abstract: A method for manufacturing a lens of a polymer material, comprises producing in the core of the lens or on the surface of the latter at least one opaque zone having an optical function, by locally degrading the molecular structure of the polymer material using a beam of laser light. Example application is provided in particular but not exclusively to CMOS imagers.
54 citations
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TL;DR: The magnitude of hygroswelling stress acting on UBM is found to be greater than the thermal stress induced during reflow, both in tensile mode which may cause the UBM-opening failure and in reflow and PCT.
54 citations
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19 Aug 2004
TL;DR: In this paper, a method to perform WLAN call requests with WWAN and WLAN interfaces is presented. But it does not specify how the call requests can be forwarded to a WLAN server.
Abstract: A method to be performed by a user terminal with WWAN and WLAN interfaces, comprising steps of: communicating via the WWAN interface; inspecting whether its WLAN interface is available; entering into a WWAN-to WLAN state from a WWAN active state if its WLAN interface is available; said user terminal provides a public server with known network address with its presence information said WWAN-to-WLAN state; and acquiring the network address of another user terminal communicating with said user terminal from said server, sending a WLAN call request to said another user terminal by using said address; entering into WLAN active state after receiving the message for accepting the WLAN call request from said another user terminal.
54 citations
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24 Jun 1992TL;DR: In this article, the authors propose a hierarchical communication protocol for communicating information and commands within a dwelling or a property between several items of electrical equipment connected to an electrical distribution circuit equipping the dwelling.
Abstract: A method for communicating information and commands within a dwelling or a property between several items of electrical equipment connected to an electrical distribution circuit equipping the dwelling, by injecting onto said distribution circuit carrier currents conveying said information and commands. The method comprises a hierarchized communication protocol between, on the one hand, items of equipment defining communication stations of Master type dedicated to the emission of information, and, on the other hand, items of equipment defining communication stations of Master-Slave type dedicated to the reception of information arising from the stations of Master type and to the emission of information intended for sets of equipment defining stations of Slave type dedicated to the reception of information and commands arising from one or more of the said stations of Master-Slave type, and to the emission of information on their condition.
54 citations
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20 Dec 2002TL;DR: A metal oxide semiconductor transistor integrated in a wafer of semiconductor material includes a gate structure located on a surface of the wafer and a gate oxide layer as mentioned in this paper, which includes a first part having a first thickness and a second portion having a second thickness differing from the first thickness.
Abstract: A metal oxide semiconductor transistor integrated in a wafer of semiconductor material includes a gate structure located on a surface of the wafer and includes a gate oxide layer. The gate oxide layer includes a first portion having a first thickness and a second portion having a second thickness differing from the first thickness.
54 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |